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MMBT9013LT1 参数 Datasheet PDF下载

MMBT9013LT1图片预览
型号: MMBT9013LT1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 152 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
 浏览型号MMBT9013LT1的Datasheet PDF文件第1页  
RoHS
MMBT9013LT1
Typical Characteristics
I
C
(mA),COLLECTOR CURRENT
20
18
16
14
12
10
8
6
4
2
0
0
10
1000
I
B
=160 A
I
B
=140 A
I
B
=120 A
I
B
=100 A
I
B
=80 A
I
B
=60 A
I
B
=40 A
I
B
=20 A
20
30
40
50
h
FE
,DC CURRENT GAIN
100
10
V
CE
(V),COLLECTOR-EMMITTER VOLTAGE
Static Characteristic
10000
fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT
VBE(sat),VCE(sat)[mA],SATURATION VOLTAGE
I
C
=10 I
B
1000
V
BE
(sat)
100
10
1
10
Base-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
W
J
E
I
C
(mA),COLLECT CURRENT
E
C
E
L
V
CE
(sat)
100
1000
R
T
10000
O
N
C
I
1
1
10
I
C
(mA),COLLECTOR CURRENT
C
O
100
L
,
.
1000
Vc
E
=1V
D
T
10000
DC Current Gain
1000
Vc
E
=6V
100
10
1
1
10
100
1000
10000
I
C
(mA),COLLECTOR CURRENT
Current Gain Bandwidth Product
SHEN ZHEN YONG ER JIA ELECTRONIC CO.,LTD.
Tel:
0755-8324
8022 Fax 0755-8324 9522
Http:// www.wej.cn