RoHS
MMBT9013LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
1W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
1.
3
1
2
Complement to 9012
Collector Current :Ic=500mA
High Total Power Dissipation Pc=225mW
2.9
1.9
0.95
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
Ic
T
j
P
D
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Breakdown Voltage#
Collector-Emitter Saturation Voltage
W
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
_
_
#
Pulse Test: Pulse Width
<
300uS Duty cycle
<
2%
DEVICE MARKING:
9013=K6
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
R
T
T
stg
H
FE1
H
FE2
V
CE(sat)
V
BE(sat)
V
BE(on)
O
N
100
100
C
I
Rating
40
20
5
500
225
150
-55~150
V
V
V
nA
nA
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
Unit:mm
D
T
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
40
20
5
Condition
I
C
=100 A I
E
=0
I
C
=1mA I
B
=0
I
E
=100 A I
C
=0
V
CB
=25V, V
C
=0
V
CB
=3V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
64
30
120
0.18
0.95
300
0.6
1.2
0.7
o
V
V
V
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
C
e
=1V, I
C
=10mA
0.6
0.67
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
