W29F102
VERSION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A1
A2
Feb. 1998
Apr. 1998
Initial Issued
1, 13, 14, 19 Add 35 nS item and delete 50 nS item
6, 7, 8, 9, 10 Change address format from A15 to A14
6, 7, 8, 9
18
Add the pause time
Correct the address from 2000 to 5555
A3
A4
Mar. 1999
Jun. 1999
1, 13, 14, 19 Add 50/70 nS bining
Delete 35 nS bining
11, 19
Change Icc 50 mA to 70 mA (only for 45 nS)
Change VIL 0.8V to 0.6V (only for 45 nS)
VHH = 12V ±0.5V
5
11, 13
VDD = 5.0V ±10%
Winbond Electronics (H.K.) Ltd.
Winbond Electronics North America Corp.
Headquarters
Rm. 803, World Trade Square, Tower II, Winbond Memory Lab.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
123 Hoi Bun Rd., Kwun Tong,
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
TEL: 408-9436666
FAX: 408-5441798
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Note: All data and specifications are subject to change without notice.
Publication Release Date: June 1999
Revision A4
- 21 -
WINBOND [ WINBOND ]
