W29F102
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
-0.5 to +7.0
0 to +70
UNIT
V
Power Supply Voltage to Vss Potential
Operating Temperature
°C
°C
V
Storage Temperature
-65 to +150
-0.5 to VDD +1.0
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (<20 nS ) on Any Pin to Ground Potential
-1.0 to VDD +1.0
-0.5 to 12.5
V
V
Voltage on OE Pin to Ground Potential
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
UNIT
MIN. TYP. MAX.
Power Supply
Current
ICC
50, 55,
70 nS
-
25
50
mA
CE OE
I/Os open Address inputs =
WE
= VIH, all
=
= VIL,
VIL/VIH, at f = 5 MHz
70
3
45 nS
-
-
25
2
mA
mA
Standby VDD
ISB1
ISB2
CE
= VIH, all I/Os open
Other inputs = VIL/VIH
CE
Current (TTL input)
Standby VDD
Current
-
20
100
mA
= VDD -0.3V, all I/Os open
Other inputs = VDD -0.3V/GND
(CMOS input)
Input Leakage
Current
ILI
VIN = GND to VDD
-
-
-
-
10
10
mA
mA
Output Leakage
Current
ILO VOUT = GND to VDD
0.8
0.6
Input Low Voltage
VIL
-
50, 55, 70 nS
45 nS
-0.3
-0.3
2.0
-
-
-
V
V
V
Input High Voltage
Output Low Voltage
VIH
-
VDD
+0.5
VOL IOL = 2.1 mA
-
-
-
0.45
-
V
V
Output High Voltage VOH IOH = -0.4 mA
2.4
Publication Release Date: June 1999
Revision A4
- 11 -
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