W25Q80BV
10.7 AC Electrical Characteristics (cont’d)
SPEC
UNIT
DESCRIPTION
SYMBOL ALT
MIN TYP
MAX
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
tCHHH
tHHCH
5
5
5
ns
ns
ns
ns
ns
ns
ns
µs
µs
tCHHL
(2)
tHHQX
tLZ
7
(2)
/HOLD to Output High-Z
tHLQZ
tWHSL
tSHWL
tHZ
12
(3)
(3)
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
20
100
(2)
tDP
3
3
(2)
(2)
/CS High to Standby Mode without Electronic Signature
Read
tRES1
/CS High to Standby Mode with Electronic Signature
Read
tRES2
1.8
µs
(2)
/CS High to next Instruction after Suspend
Write Status Register Time
tSUS
20
15
µs
ms
µs
µs
ms
ms
ms
ms
s
tW
10
30
(4)
Byte Program Time (First Byte)
tBP1
tBP2
tPP
tSE
tBE
50
(4)
Additional Byte Program Time (After First Byte)
2.5
0.7
30
12
Page Program Time
3
(5)
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
200/400
800
1,000
6
120
150
2
1
tBE
2
tCE
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5. Max Value t with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
SE
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