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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.13 Fast Read Quad Output (6Bh)  
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction  
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be  
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE  
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the  
W25Q128BV at four times the rate of standard SPI devices.  
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC  
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address  
as shown in Figure 12. The dummy clocks allow the device's internal circuits additional time for setting up  
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be  
high-impedance prior to the falling edge of the first data out clock.  
/CS  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31  
CLK  
IO0  
Instruction (6Bh)  
24-Bit Address  
23 22 21  
3
2
1
0
*
High Impedance  
High Impedance  
High Impedance  
IO1  
IO2  
IO3  
= MSB  
*
/CS  
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47  
CLK  
IO0 switches from  
Dummy Clocks  
Input to Output  
0
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
IO0  
IO1  
IO2  
IO3  
High Impedance  
High Impedance  
High Impedance  
Byte 1  
Byte 2  
Byte 3  
Byte 4  
Figure 12. Fast Read Quad Output Instruction Sequence Diagram  
Publication Release Date: April 01, 2011  
Revision E  
- 29 -  
 
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