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W25Q128BV 参数 Datasheet PDF下载

W25Q128BV图片预览
型号: W25Q128BV
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 3V 128M位串行闪存 [3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存
文件页数/大小: 74 页 / 756 K
品牌: WINBOND [ WINBOND ]
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W25Q128BV  
7.2.12 Fast Read Dual Output (3Bh)  
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except  
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q128BV at  
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly  
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to  
RAM for execution.  
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest  
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight  
“dummy” clocks after the 24-bit address as shown in Figure 11. The dummy clocks allow the device's  
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is  
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out  
clock.  
/CS  
Mode 3  
Mode 0  
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31  
CLK  
Instruction (3Bh)  
24-Bit Address  
DI  
(IO0)  
23 22 21  
3
2
1
0
*
High Impedance  
DO  
(IO1)  
= MSB  
*
/CS  
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55  
CLK  
IO0 switches from  
Dummy Clocks  
Input to Output  
DI  
(IO0)  
0
6
4
2
0
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
4
5
2
3
0
1
6
7
High Impedance  
DO  
(IO1)  
7
5
3
1
7
7
7
Data Out 1  
Data Out 2  
Data Out 3  
Data Out 4  
*
*
*
*
Figure 11. Fast Read Dual Output Instruction Sequence Diagram  
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