ISD5100 – SERIES
12.4 ISD5116 DIE INFORMATION
VCCD
VCCD
VSSD
SDA
A0
SCL
A1
INT
RAC
VSSA
VSSD
XCLK
ISD5116 Device
Die Dimensions
X: 4125 µm
Y: 8030 µm
Die Thickness [3]
292.1 µm ± 12.7 µm
Pad Opening
ISD5116
Single pad: 90 x 90 µm
Double pad: 180 x 90 µm
≈
≈
VSSA
MIC +
AUX OUT
AUX IN
[2]
MIC -
ANA OUT -
SP -
VSSA
VCCA
SP +
ANA IN
[2]
ANA OUT +
ACAP
Notes
1.
The backside of die is internally connected to Vss. It MUST NOT be connected to any other potential or
damage may occur.
2.
3.
Double bond recommended, if treated as single doubled-pad.
This figure reflects the current die thickness. Please contact Winbond as this thickness may change in
the future.
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