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25M02GVTCIG 参数 Datasheet PDF下载

25M02GVTCIG图片预览
型号: 25M02GVTCIG
PDF下载: 下载PDF文件 查看货源
内容描述: [3V 2G-BIT (2 x 1G-BIT) SERIAL SLC NAND FLASH MEMORY WITH DUAL/QUAD SPI BUFFER READ & CONTINUOUS READ CONCURRENT OPERATIONS]
分类和应用:
文件页数/大小: 68 页 / 820 K
品牌: WINBOND [ WINBOND ]
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W25M02GV  
8.2.14 Program Execute (10h)  
The Program Execute instruction is the second step of the Program operation. After the program data are  
loaded into the 2,112-Byte Data Buffer (or 2,048 bytes when ECC is enabled), the Program Execute  
instruction will program the Data Buffer content into the physical memory page that is specified in the  
instruction. The instruction is initiated by driving the /CS pin low then shifting the instruction code “10h”  
followed by 8-bit dummy clocks and the 16-bit Page Address into the DI pin as shown in Figure 17.  
After /CS is driven high to complete the instruction cycle, the self-timed Program Execute instruction will  
commence for a time duration of tpp (See AC Characteristics). While the Program Execute cycle is in  
progress, the Read Status Register instruction may still be used for checking the status of the BUSY bit.  
The BUSY bit is a 1 during the Program Execute cycle and becomes a 0 when the cycle is finished and  
the device is ready to accept other instructions again. After the Program Execute cycle has finished, the  
Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Program Execute instruction will  
not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1, and BP0) bits.  
Figure 17. Program Execute Instruction  
Publication Release Date: July 1, 2015  
- 38 -  
Preliminary - Revision B  
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