WILLAS
SOT-23 Plastic-Encapsulate MOSFETS
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
Output Characteristics
better reverse leakage current and thermal resistance.
V
GS
=25
℃
mounted application
•
T
Low profile surface
=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
in order to
a
Pulsed
optimize board space.
V
GS
=-2.0V
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
V
Halogen free product for packing code suffix
GS
=-1.5V
"H"
FM120-M
SE2305
THRU
FM1200-M
•
Batch process design, excellent power dissipation offers
Features
Package outline
Typical Characteristics
-5
SOD-123
PACKAGE
Pb Free Produ
-16
T
a
=25
℃
Pulsed
-4
Transfer Characteristics
SOD-123H
0.146(3.7)
0.130(3.3)
(A)
-12
0.012(0.3) Typ.
I
D
I
D
(A)
-3
DRAIN CURRENT
-8
DRAIN CURRENT
0.071(1.8)
0.056(1.4)
-2
-4
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
-0
•
Case : Molded plastic, SOD-123H
-0
-1
-2
-3
-4
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
DRAIN TO SOURCE VOLTAGE
-1
0.040(1.0)
0.024(0.6)
-0
-0.0
0.031(0.8) Typ.
-0.5
-1.0
-1.5
0.031(0.8) Typ.
-2.0
Method 2026
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
300
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
R
DS(ON)
—— I
D
•
T
Weight : Approximated 0.011 gram
=25
℃
Pulsed
a
Dimensions in inches and (millimeters)
500
R
DS(ON)
——
V
GS
T
a
=25
℃
Pulsed
(m
Ω
)
240
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
400
R
DS(ON)
ON-RESISTANCE
(m
Ω
)
300
R
DS(ON)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For
180
capacitive load, derate current by 20%
RATINGS
120
ON-RESISTANCE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
V
GS
=-1.8V
V
RRM
V
RMS
V
GS
=-2.5V
V
DC
12
20
14
20
13
200
30
21
30
100
14
40
28
40
15
50
35
50
I
D
=-3.3A
16
60
42
60
1.0
30
-4
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
60
Maximum Average Forward Rectified Current
I
O
V
GS
=-4.5V
-9
Peak Forward Surge Current 8.3 ms single half sine-wave
0
superimposed on rated load (JEDEC method)
-0
-3
-6
I
FSM
-6
-8
-12
0
-0
-2
Typical Thermal Resistance (Note 2)
DRAIN CURRENT
I
D
(A)
R
ΘJA
C
J
T
J
TSTG
GATE TO SOURCE VOLTAGE
V
GS
(V)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
I
S
——
-55 to +125
-55 to +150
-
65
to +175
-20
V
SD
T
a
=25
℃
-10
Pulsed
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
I
S
(A)
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
Rated
-3
DC Blocking Voltage
NOTES:
SOURCE CURRENT
I
R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-1
-0.3
-0.1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
2012-06
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
