WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOT-23 Plastic-Encapsulate MOSFETS
200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
P-Channel
High surge capability.
•
8-V(D-S) MOSFET
•
Guardring for overvoltage protection.
•
FEATURE
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
TrenchFET Power MOSFET
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
SE2305
THRU
FM1200-M
Pb Free Produ
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-23
0.071(1.8)
0.056(1.4)
1. GATE
2. SOURCE
3. DRAIN
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Mechanical data
APPLICATIONS
Epoxy UL94-V0 rated flame retardant
Load
•
Switch
:
for Portable Devices
•
Case : Molded
DC/DC Converter
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Pb-Free package is available
Method 2026
RoHS
Polarity : Indicated by cathode band
suffix ”G”
•
product for packing code
•
Mounting
product for
Halogen free
Position : Any
packing code suffix “H”
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MARKING: S5
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum ratings (T
a
=25℃ unless otherwise noted)
Maximum DC Blocking Voltage
20
V
DC
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
Parameter
Symbol
V
DS
V
GS
I
D
I
S
P
D
R
θJA
T
J
T
STG
Value
-8
Unit
Drain-Source Voltage
(JEDEC method)
superimposed on rated load
Typical Thermal Resistance (Note 2)
Gate-Source Voltage
Continuous Drain Current
Typical Junction Capacitance (Note 1)
Operating Temperature Range
-55 to +125
±8
-4.1
-0.8
0.35
0.50
V
-55 to +150
A
Continuous Source-Drain Diode Current
Storage Temperature Range
-
65
to +175
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t≤10s)
Junction Temperature
Maximum Average Reverse Current at @T A=25℃
Storage
DC Blocking Voltage
@T A=125℃
Rated
Temperature
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
W
Maximum Forward Voltage at 1.0A DC
V
F
I
R
357
150
0.70
0.5
10
0.85
℃/W
℃
0.9
0.92
-50 ~+150
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
