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SCS520S-40 参数 Datasheet PDF下载

SCS520S-40图片预览
型号: SCS520S-40
PDF下载: 下载PDF文件 查看货源
内容描述: SOD- 523塑封装二极管 [SOD-523 Plastic-Encapsulate Diodes]
分类和应用: 二极管
文件页数/大小: 3 页 / 418 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号SCS520S-40的Datasheet PDF文件第1页浏览型号SCS520S-40的Datasheet PDF文件第3页  
SOD-523 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
SCS520S-40
THRU
FM1200-M
Pb Free Product
Features
Package outline
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
Forward Characteristics
High surge capability.
100
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
10
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ta
=1
00
o
Typical Characteristics
100
SOD-123H
0.146(3.7)
0.130(3.3)
Reverse
Characteristics
0.012(0.3) Typ.
(mA)
0.071(1.8)
0.056(1.4)
I
F
(uA)
C
Ta=100 C
10
o
C
1
Mechanical data
REVERSE CURRENT I
R
FORWARD CURRENT
Ta
=2
5
o
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
0.1
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
1
0.031(0.8) Typ.
Ta=25 C
o
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
0.01
Mounting Position : Any
0.4
0.0
0.2
Weight : Approximated
VOLTAGE V
F
FORWARD
0.011 gram
Dimensions in inches and (millimeters)
0.6
0.8
0.1
0
10
20
30
40
(V)
REVERSE VOLTAGE
V
R
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load,
Capacitance Characteristics
derate current by 20%
100
 
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Ta=25
f=1MHz
200
Power Derating Curve
14
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
V
RRM
V
RMS
V
DC
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
15
(mW)
Marking Code
12
20
14
20
13
30
21
Volt
150
P
D
28
40
Volt
30
Volt
POWER DISSIPATION
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
10
100
 
 
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
 
50
 
-55 to +150
℃/W
PF
-55 to +125
 
-
65
to +175
 
1
0
5
10
CHARACTERISTICS
20
0
50
100
150
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
0
Maximum Forward Voltage at 1.0A DC
REVERSE VOLTAGE
Rated DC Blocking Voltage
 
V
R
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
V
(V)
F
I
R
0.50
AMBIENT TEMPERATURE T
a
0.70
0.85
(
)
0.9
0.92
 
Volt
0.5
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-06
WILLAS ELECTRONIC CORP.
2012-11
WILLAS ELECTRONIC CORP.