WILLAS
SOD-523 Plastic-Encapsulate
RECTIFIERS -20V- 200V
Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Schottky
power loss, high efficiency.
•
Low
Barrier Diode
•
High current capability, low forward voltage drop.
FEATURES
•
High surge capability.
•
Guardring for overvoltage protection.
Small surface mounting type
•
Ultra high-speed switching.
•
Silicon
I
epitaxial planar chip, metal silicon junction.
Low
R
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
High reliability
•
RoHS product for packing code suffix "G"
Pb-Free package
packing code suffix "H"
Halogen free product for
is available
FM120-M
SCS520S-40
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
SOD-523
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
RoHS product for packing code suffix ”G”
•
Epoxy : UL94-V0
product for
retardant
code suffix “H”
Halogen free
rated flame
packing
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
MARKING: D
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Symbol
V
R
Limit
40
16
60
42
60
Unit
V
10
A
100
115
150
105
150
120
200
140
200
DC reverse voltage
Mean rectifying current
Marking Code
Maximum RMS Voltage
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Peak forward surge current
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
I
0
15
I
FSM
50
35
0.2
18
1
80
56
70
A
Volts
Volts
Volts
Maximum DC Blocking Voltage
Power Dissipation
Maximum Average Forward Rectified Current
50
P
D
150
80
1.0
667
30
40
100
mW
Peak Forward Surge Current 8.3 ms single half sine-wave
Thermal resistance from junction to ambient
I
FSM
R
ΘJA
C
J
T
J
TSTG
R
θJA
T
J
℃/W
Amps
℃/W
PF
℃
℃
Junction
rated load (JEDEC method)
superimposed on
temperature
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
125
Amps
Storage temperature
-55 to +125
T
STG
-55~+150
120
℃
-
65
to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
Electrical Ratings
Rated DC Blocking Voltage
@T
A
=25℃
A=125℃
@T
mAmps
NOTES:
Symbol
1- Measured at 1 MHZ
Parameter
and applied reverse voltage of 4.0 VDC.
Min
Typ
Max
0.39
0.55
1
10
Unit
V
μA
Conditions
I
F
=10mA
I
F
=100mA
V
R
=10V
V
R
=40V
2- Thermal Resistance From Junction to Ambient
Forward voltage
Reverse current
V
F
I
R
2012-06
WILLAS ELECTRONIC CORP.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
