FM120-M
THRU
MMBTA94LT1
PNP EPITAXIAL
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT
PLANAR TRANSISTOR
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
& Collector Current
Current Gain
1000
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
o
C
75
o
125 C
overvoltage protection.
•
Guardring for
•
Ultra high-speed switching.
100
o
25 C
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
for packing code suffix "G"
•
RoHS product
@ V
CE
=3V
10
hFE
Halogen free product for packing code suffix "H"
hFE
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
Characteristics Curve
1000
SOD-123H
Current Gain & Collector Current
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
hFE @ V
CE
=10V
o
75 C
125 C
o
0.071(1.8)
0.056(1.4)
hFE
100
25 C
o
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
1
•
Case : Molded plastic, SOD-123H
1
10
100
1000
,
•
Terminals :Plated
Collector Current-I
C
(mA)
terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
10
1
10
100
0.031(0.8) Typ.
1000
Collector Current-I
C
(mA)
•
Polarity : Indicated by cathode band
Saturation Voltage
•
Mounting Position : Any
& Collector Current
1000
•
Weight : Approximated 0.011 gram
V
CE(sat)
@ I
C
=10I
B
Dimensions in inches and (millimeters)
Saturation Voltage & Collector Current
1000
25 C
o
Saturation Voltage (mV)
Ratings at 25℃ ambient temperature unless otherwise specified.
o
125 C
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
100
RATINGS
25 C
o
Saturation Voltage (mV)
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
75 C
o
125 C
75 C
o
V
BE(s at)
@
FM1150-MH FM1200-MH
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
I
C
=10I
B
UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC
10
Blocking Voltage
1
10
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
12
20
14
20
1000
13
30
21
30
14
40
28
40
15
50
35
100
1
16
60
42
60
10
1.0
30
18
80
56
80
10
100
70
100
100
115
150
105
150
1000
120
200
140
200
Volts
Volts
Volts
Amps
50
100
Collector Current-I
C
(mA)
I
O
I
FSM
Collector Current-I
C
(mA)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
℃/W
PF
℃
℃
Capacitance
2)
Typical Thermal Resistance (Note
& Reverse-Biased Voltage
R
ΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Capacitance (pF)
100
C
J
T
J
TSTG
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
10
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
Maximum Average Reverse Current
Cob
@T A=25℃
at
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1
0.1
1
10
100
Reverse-Biased Voltage (V)
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
