FM120-M
THRU
MMBTA94LT1
PNP EPITAXIAL PLANAR
BARRIER RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
TRANSISTOR
SOD-123
•
Batch
that the material of product
We declare
process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
compliance with
surface mounted application in order to
•
Low profile
RoHS requirements.
optimize board space.
Pb-Free package is available
•
product for packing code suffix ”G”
RoHS
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Halogen free product for packing code suffix “H”
•
High surge capability.
•
Guardring for overvoltage protection.
Description
•
Ultra high-speed switching.
The
•
Silicon epitaxial planar chip, metal silicon junction.
MMBTA94LT1 is designed for application
•
Lead-free
high voltage.
that requires
parts meet environmental standards of
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.056(1.4)
SOT– 23
0.071(1.8)
•
High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
Mechanical data
•
Complementary to MMBTA94LT1
•
Epoxy : UL94-V0 rated flame retardant
DEVICE MARKING
plastic, SOD-123H
•
Case : Molded
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MMBTA94LT1
= 4Z
Method 2026
0.031(0.8) Typ.
MIL-STD-19500 /228
for packing code suffix
•
RoHS
Features
productproduct for packing code"G" "H"
Halogen free
suffix
COLLECTOR
3
0.040(1.0)
0.024(0.6)
1
BASE
0.031(0.8) Typ.
2
EMITTER
Dimensions in inches and (millimeters)
•
Maximum Temperatures
•
Mounting Position : Any
Storage Temperature ............................................................................................ -55 ~ +150
°C
•
Weight : Approximated 0.011 gram
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Power Dissipation
Ratings at
Power Dissipation (Ta=25°C) ................................................................................ 350 mW
Total
25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
•
Maximum Voltages and Currents (Ta=25°C)
capacitive load, derate current by 20%
For
VCBO Collector to Base Voltage ...................................................................................... -400 V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
VCEO Collector to Emitter Voltage ................................................................................... -400 V
Marking Code
Emitter to Base Voltage ............................................................................................. -6 V
115
12
13
14
15
16
18
10
120
VEBO
20
30
40
50
60
80
100
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
IC Collector Current ...................................................................................................... -150 mA
150
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Characteristics
(Ta=25 C)
°
Volts
Maximum DC Blocking Voltage
Absolute Maximum
cathode band
Ratings
•
Polarity : Indicated by
V
DC
20
30
40
50
60
80
100
150
200
I
O
1.0
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Peak Forward Surge Current 8.3 ms single half
-
sine-wave
BVCBO
-400
-
V
IC=-100uA, IE=0
30
I
FSM
superimposed on rated load
-400
method)
-
(JEDEC
BVCEO
-
V
IC=-1mA, IB=0
40
Typical Thermal Resistance
-6
(Note 2)
R
ΘJA
BVEBO
-
-
V
IE=-10uA, IC=0
Typical Junction Capacitance (Note 1)
C
J
ICBO
-
-
-100
nA
VCB=-400V, IE=0
120
-55 to +125
-55 to +150
Operating Temperature Range
T
J
IEBO
-
-
-100
nA
VEB=-6V, IC=0
-
65
to +175
Storage Temperature Range
TSTG
ICES
-
-
-500
nA
VCE=-400V, VBE=0
*VCE(sat)1
CHARACTERISTICS
-
-
-200
mV
IC=-1mA, IB=-0.1mA
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
*VCE(sat)2
-
-
-300
mV
IC=-10mA, IB=-1mA
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
*VCE(sat)3
Reverse Current at @T
-
-
-600
mV
IC=-50mA, IB=-5mA
0.5
Maximum Average
A=25℃
I
R
*VBE(sat)
-900
mV
IC=-10mA, IB=-1mA
10
@T
-
A=125℃
Rated DC Blocking Voltage
-
*hFE1
50
-
-
VCE=-10V, IC=-1mA
NOTES:
*hFE2
75
-
200
VCE=-10V, IC=-10mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
*hFE3
60
-
-
VCE=-10V, IC=-50mA
2- Thermal Resistance From Junction to Ambient
*hFE4
20
-
-
VCE=-10V, IC=-100mA
Cob
-
4
6
pF
VCE=-10V, f=1MHz
Maximum Average Forward Rectified Current
Amps
Amps
℃/W
PF
℃
℃
UNIT
Volts
mAmps
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
