FM120-M
THRU
MMBT4403LT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
STATIC CHARACTERISTICS
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
h
FE
, NORMALIZED CURRENT GAIN
power loss, high efficiency.
•
Low
3.0
V
CE
= 1.0 V
•
High current capability, low forward voltage drop.
2.0
V
CE
=
•
High surge capability.
10 V
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
1.0
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.7
WILLAS
Pb Free Product
Features
Package outline
SOD-123H
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
T
J
= 125°C
25°C
0.071(1.8)
0.056(1.4)
–55°C
•
RoHS product for packing code suffix "G"
0.5
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
Mechanical data
0.3
•
Epoxy : UL94-V0 rated flame retardant
0.2
Molded
0.2
plastic, SOD-123H
1.0
•
Case :
0.1
0.031(0.8) Typ.
0.3
0.5
0.7
2.0
3.0
5.0 7.0
10
20
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
I , COLLECTOR CURRENT (mA)
Method 2026
C
30
50
70
100
20
0.031(0.8) Typ.
300
500
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
1.0
•
Weight : Approximated 0.011 gram
0.8
Figure 14. DC Current Gain
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
0.6
wave, 60Hz, resistive of inductive load.
half
I
C
=1.0 mA
10 mA
For capacitive load, derate current by 20%
0.4
100mA
500mA
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Marking Code
Maximum Recurrent Peak Reverse Voltage
0.2
Maximum RMS Voltage
Maximum DC Blocking Voltage
0
0.005 0.01
0.02 0.03
Maximum Average Forward Rectified Current
0.05
V
RRM
V
RMS
V
DC
0.07 0.1
I
O
12
20
14
20
0.2
0.3
13
30
21
30
0.5
0.7
14
40
28
40
1.0
15
50
35
50
2.0
3.0
16
60
42
60
5.0
1.0
30
18
80
56
80
7.0
10
10
100
70
100
20
30
115
150
105
150
50
120
200
140
200
Volts
Volts
Volts
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
I
B
, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
Amp
Typical Thermal Resistance (Note 2)
10
Typical Junction Capacitance (Note 1)
R
ΘJA
C
J
T
J
TSTG
Operating Temperature Range
Storage Temperature Range
0.8
T
J
= 25°C
COEFFICIENT (mV/ °C)
+ 0.5
-55 to +125
0
40
120
-55 to +150
℃/W
PF
℃
℃
V, VOLTAGE ( VOLTS )
0.6
V
BE(sat)
@ I
C
/I
B
=10
-
65
θ
+175
to
for V
CE(sat)
VC
0.70
0.5
10
0.85
0.9
0.92
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
BE
Rated DC Blocking Voltage
V @ V
CE
=1.0 V
@T A=125℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
– 0.5
V
F
I
R
0.50
Maximum Average Reverse Current at @T A=25℃
0.4
–1.0
Volts
mAmp
–1.5
NOTES:
0.2
CE(sat)
C
B
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
V
@ I /I =10
–2.0
θ
VS
for V
BE
2- Thermal Resistance From Junction to Ambient
0
0.1
0.2
0.5
1.0 2.0
5.0
– 2.5
10
20
50
100 200
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
