FM120-M
MMBT4403LT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Characteristic
•
Batch process design, excellent power dissipation offers
ON CHARACTERISTICS
better reverse leakage current and thermal resistance.
DC Current Gain
•
Low profile surface mounted application in order to
(I
board space.
optimize
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
–1.0 mAdc, V
CE
= –1.0
•
Low power
=
loss, high efficiency.
Vdc)
(I
C
=
capability,
CE
= –1.0 Vdc)
•
High current
–10 mAdc, V
low forward voltage drop.
•
High surge capability.
V
CE
= –2.0 Vdc)(3)
(I
C
= –150 mAdc,
•
Guardring
= –500 mAdc, V
CE
= –2.0 Vdc)(3)
(I
C
for overvoltage protection.
•
Ultra high-speed switching.
Collector–Emitter Saturation Voltage(3)
epitaxial planar
B
= –15 mAdc)
•
Silicon
(I
C
= –150mAdc, I
chip, metal silicon junction.
•
Lead-free
= –500 mAdc, I
B
= –50 mAdc)
(I
C
parts meet environmental standards of
MIL-STD-19500 /228
Base–Emitter Saturation Voltage
•
RoHS product for packing code suffix "G"
(3)
(I
C
=
product for
I
B
= –15 mAdc)
Halogen free
–150 mAdc,
packing code suffix "H"
(I
C
= –500
data
Mechanical
mAdc, I
B
= –50 mAdc)
WILLAS
PACKAGE
Max
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Pb Free Product
Unit
––
Features
Symbol
h
FE
Package outline
Min
30
60
100
100
20
SOD-123H
––
0.146(3.7)
––
0.130(3.3)
––
300
––
0.012(0.3) Typ.
V
CE(sat)
––
––
V
BE(sat)
0.071(1.8)
0.056(1.4)
Vdc
– 0.4
– 0.75
Vdc
– 0.95
– 1.3
0.040(1.0)
0.024(0.6)
– 0.75
––
•
Epoxy : UL94-V0 rated flame retardant
SMALL–SIGNAL CHARACTERISTICS
•
Case : Molded plastic, SOD-123H
Current–Gain — Bandwidth Product
,
•
Terminals
= –20mAdc, V
CE
= –10 Vdc, f = 100 MHz)
:Plated terminals, solderable per MIL-STD-750
(I
C
•
Emitter–Base Capacitance
•
Mounting Position : Any
•
Weight
(V
BE
= –0.5 Vdc, I
0.011 gram
MHz)
: Approximated
C
= 0, f = 1.0
Input Impedance
(V
CE
= –10 Vdc, I
C
= –1.0
AND
= 1.0 kHz)
MAXIMUM RATINGS
mAdc, f
ELECTRICAL
Method 2026
Collector–Base Capacitance
Polarity : Indicated by
I
E
= 0, f =
band
(V
CB
= –10 Vdc,
cathode
1.0 MHz)
f
T
C
cb
0.031(0.8) Typ.
0.031(0.8) Typ.
MHz
pF
200
––
Dimensions in inches
8.5
(millimeters)
and
––
C
eb
––
h
ie
30
pF
kΩ
15
–4
CHARACTERISTICS
1.5
h
re
X 10
Ratings at 25℃
Voltage Feedback Ratio
ambient temperature unless otherwise specified.
(V
CE
=
60Hz, resistive of
mAdc, f
load.
0.1
8.0
Single phase half wave,
–10 Vdc, I
C
= –1.0
inductive
= 1.0 kHz)
Small–Signal Current Gain
h
fe
—
For capacitive load, derate current by 20%
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
60
500
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Output Admittance
h
oe
µmhos
Marking Code
12
13
14
15
16
18
10
115
120
(V
CE
= –10 Vdc, I
C
= –1.0 mAdc, f = 1.0 kHz)
1.0
100
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Maximum
SWITCHING
RMS Voltage
CHARACTERISTICS
V
RMS
14
21
30
t
d
28
40
35
50
—
42
60
1.0
30
40
120
56
80
15
70
100
105
150
140
200
Volts
Volts
Maximum DC Blocking Voltage
Delay Time
20
V
DC
(V
CC
= – 30 Vdc, V
EB
= –2.0 Vdc,
Maximum Average Forward Rectified Current
I
=
Rise Time
I
C
= –150mAdc, I
B1
O
–15 mAdc)
t
d
t
s
—
—
—
20
225
30
ns
ns
Amps
I
FSM
superimposed on rated load (JEDEC method)
I
B2
= –15 mAdc)
Fall Time
I
B1
=
Typical Thermal Resistance (Note 2)
R
ΘJA
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle
J
<2.0%.
Typical Junction Capacitance (Note 1)
C
Operating Temperature Range
Storage Temperature Range
Storage Time
(V
CC
sine-wave
Peak Forward Surge Current 8.3 ms single half
= –30 Vdc, I
C
= –150 mAdc,
℃/W
PF
℃
℃
Amps
t
f
-55 to +125
-55 to +150
T
J
TSTG
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SWITCHING TIME EQUIVALENT TEST CIRCUITS
– 30 V
V
F
I
R
200
+ 14V
0
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.50
0.70
0.5
< 20 ns
10
Maximum Average Reverse Current at @T A=25℃
+2.0V
<2.0 ns
0.85
– 30 V
0.9
0.92
Volts
@T A=125℃
200
mAmp
NOTES:
1.0 k
C
S
* < 10 pF
1.0 k
1N916
C
S
*< 10 pF
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
–16 V
1.0 to 100µs,
DUTY CYCLE = 2%
–16 V
+4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
1.0 to 100µs,
DUTY CYCLE = 2%
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
