FM120-M
THRU
MMBT4401WT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistors
SOD-123
PACKAGE
dissipation offers
•
Batch process design, excellent power
STATIC CHARACTERISTICS
better reverse leakage current and thermal resistance.
WILLAS
Pb Free Produ
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
3.0
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
, NORMALIZED CURRENT GAIN
high
•
Low power loss,
V =
efficiency.
1.0 V
CE
•
2.0
High current capability, low forward voltage drop.
V
CE
=10 V
•
High surge capability.
T
J
= 125°C
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
1.0
•
Silicon epitaxial planar chip, metal silicon junction.
25°C
•
0.7
Lead-free parts meet environmental standards of
0.5
RoHS
0.071(1.8)
0.056(1.4)
•
MIL-STD-19500 /228
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
–55°C
0.3
Mechanical data
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.2
plastic, SOD-123H
•
Case : Molded
0.3
0.1
0.2
0.5
0.7
1.0
2.0
3.0
5.0 7.0
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
h
FE
10
20
30
0.031(0.8) Typ.
50
70
100
20
300
0.031(0.8) Typ.
500
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR EMITTER VOLTAGE (VOLTS)
•
Polarity : Indicated by cathode band
1.0
Mounting Position : Any
•
•
Weight : Approximated 0.011 gram
0.8
Figure 15. DC Current Gain
Dimensions in inches and (millimeters)
T
J
= 25°C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100mA
500mA
Ratings at 25℃ ambient temperature unless otherwise specified.
0.6
10 mA
I
wave, 60Hz, resistive of inductive load.
Single phase half
C
=1.0 mA
For capacitive load, derate current by 20%
0.4
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0
Maximum DC Blocking Voltage
0.01
0.02
0.03
0.2
V
RRM
V
RMS
V
DC
12
20
14
0.3
13
30
21
0.7
14
40
28
40
2.0
15
50
35
3.0
16
60
42
5.0
18
80
56
1.0
30
10
10
100
70
20
115
150
105
50
120
200
140
200
Maximum Average Forward Rectified Current
I
O
I
B
, BASE CURRENT (mA)
Peak Forward Surge Current 8.3 ms single half sine-wave
Figure 16. Collector Saturation Region
I
FSM
superimposed on rated load (JEDEC method)
0.05 0.07
0.1
0.2
20
0.5
30
1.0
50
60
7.0
80
100
30
150
Typical Thermal Resistance (Note 2)
10
R
ΘJA
T
J
=
Capacitance (Note 1)
Typical Junction
25°C
Operating Temperature Range
0.8
Storage Temperature Range
V
BE(sat)
@ I
C
/I
B
=10
C
J
T
J
TSTG
+0.5
-55 to
0
+125
40
120
-55 to +150
V, VOLTAGE ( VOLTS )
COEFFICIENT (mV/ °C)
θ
VC
for V
CE(sat)
-
65
to +175
– 0.5
–1.0
–1.5
–2.0
– 2.5
0.6
V
BE
@ V
CE
=1.0
CHARACTERISTICS
V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
Maximum Forward Voltage at 1.0A DC
0.4
Maximum Average Reverse Current at @T A=25℃
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
I
R
NOTES:
0.2
V
CE(sat)
@ I
C
/I
B
=10
θ
VB
for V
BE
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction
5.0
Ambient
to
10 20
0.1 0.2
0.5 1.0 2.0
0
50
100 200
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
I
C
, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
