FM120-M
THRU
MMBT4401WT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
•
We declare that the material of product compliance with RoHS requirements.
optimize board space.
•
Low power loss, high efficiency.
•
Pb-Free package is available
•
High current
packing code suffix ”G”
RoHS product for
capability, low forward voltage drop.
•
High surge capability.
Halogen free product for packing code suffix “H”
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
ORDERING INFORMATION
chip, metal silicon junction.
•
Silicon epitaxial planar
•
Lead-free parts meet environmental standards of
Device
Marking
Shipping
MIL-STD-19500 /228
suffix "G"
•
RoHS product for packing code
3000/Tape & Reel
MMBT4401WT1
2X
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
3
1
2
0.071(1.8)
0.056(1.4)
Mechanical
MAXIMUM RATINGS
data
SOT-323
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
Value
Rating
Symbol
Unit
•
Case : Molded plastic, SOD-123H
Collector–Emitter Voltage
V
CEO
40
Vdc
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Base Voltage
V
CBO
Method 2026
Emitter–Base
: Indicated by cathode band
V
EBO
•
Polarity
Voltage
I
C
60
Vdc
6.0
600
Vdc
mAdc
3
Dimensions in inches and (millimeters)
1
BASE
Collector Current — Continuous
•
Mounting Position : Any
COLLECTOR
•
Weight : Approximated 0.011 gram
THERMAL CHARACTERISTICS
2
Characteristic
Max
Unit
Ratings at 25℃ ambient temperature unless otherwise
Symbol
specified.
EMITTER
225
mW
Total Device
wave, 60Hz, resistive of inductive load.
P
D
Single phase half
Dissipation FR– 5 Board, (1)
T
A
= 25°C
For capacitive load, derate current by 20%
Derate above 25°C
1.8
mW/°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Marking Code
12
13
14
15
16
18
10
115
120
Total Device Dissipation
P
D
300
mW
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
Alumina Substrate, (2) T
A
= 25°C
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Derate above 25°C
2.4
mW/°C
Maximum DC Blocking Voltage
30
40
°C/W
50
60
80
100
150
200
V
DC
R
θJA
20
Thermal Resistance, Junction to Ambient
417
Maximum Average Forward Rectified Current
I
O
T
J
, T
stg
1.0
Junction and Storage Temperature
–55 to +150
°C
Peak Forward Surge Current 8.3 ms single half sine-wave
30
I
FSM
superimposed on rated load (JEDEC method)
DEVICE MARKING
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Typical Thermal Resistance (Note 2)
C
J
-55 to
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
+125
Operating Temperature Range
T
J
Typical Junction Capacitance (Note 1)
Storage Temperature Range
MMBT4401LT1
= 2X
R
ΘJA
Max
0.70
40
120
-
65
to +175
Unit
-55 to +150
Characteristic
TSTG
Symbol
Min
0.50
OFF CHARACTERISTICS
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
(I
C
= 1.0 mAdc, I
B
= 0)
@T
Rated DC Blocking Voltage
Collector–Base Breakdown Voltage
A=125℃
(I
NOTES:
C
= 0.1 mAdc, I
E
= 0)
Emitter–Base Breakdown
reverse
1- Measured at 1 MHZ and applied
Voltage
voltage of 4.0 VDC.
Maximum Average Reverse Current at @T A=25℃
Collector–Emitter Breakdown Voltage (3)
V
F
V
(BR)CEO
I
R
40
V
(BR)CBO
60
V
(BR)EBO
—
—
0.5
10
Vdc
Vdc
Vdc
0.85
0.9
0.92
E
C
2- Thermal Resistance From Junction to Ambient
(I = 0.1 mAdc, I = 0)
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
6.0
I
BEV
—
I
CEX
—
—
µAdc
0.1
µAdc
0.1
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
