FM120-M
THRU
MMBT4401LT1
FM1200-M
1.0A
General Purpose
BARRIER RECTIFIERS -20V- 200V
SURFACE MOUNT SCHOTTKY
Transistor
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
.122(3.10)
•
High current capability, low forward voltage drop.
.106(2.70)
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
WILLAS
PACKAGE
Pb Free Product
Features
SOT-23
Package outline
.006(0.15)MIN.
SOD-123H
.063(1.60)
.047(1.20)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
.080(2.04)
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
.008(0.20)
.003(0.08)
0.031(0.8) Typ.
.070(1.78)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient
.004(0.10)MAX.
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
12
.020(0.50)
20
V
RRM
.012(0.30)
V
RMS
V
DC
I
FSM
14
20
13
30
21
30
.055(1.40)
.035(0.89)
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
I
O
Dimensions in inches and (millimeters)
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
℃/W
PF
℃
℃
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
0.037
C
0.95
J
T
J
TSTG
-55 to +125
0.037
0.95
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.079
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
0.50
2.0
0.70
0.5
10
0.85
0.9
0.92
Volts
I
0.035
R
@T A=125℃
0.9
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
