FM120-M
THRU
MMBT4401LT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistor
SOD-123
Symbol
h
FE
20
40
80
100
40
V
CE(sat)
––
––
V
BE(sat)
0.75
––
0.95
1.2
0.4
0.75
Vdc
0.146(3.7)
0.130(3.3)
WILLAS
PACKAGE
Min
Pb Free Product
Unit
––
Characteristic
•
Batch process design, excellent power dissipation offers
Features
Package
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
outline
Max
SOD-123H
optimize board space.
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
•
Low power loss, high efficiency.
(I
C
= 1.0 mAdc, V = 1.0 Vdc)
low
•
High current capability,
CE
forward voltage drop.
(I
C
= 10 mAdc, V
•
High surge capability.
CE
= 1.0 Vdc)
(I
C
150 mAdc, V
CE
protection.
•
Guardring
=
for overvoltage
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
=
•
Ultra high-speed switching.
2.0 Vdc)
epitaxial planar chip, metal silicon
•
Silicon
Collector–Emitter Saturation Voltage
junction.
(I
C
parts meet
I
B
= 15 mAdc)
•
Lead-free
= 150 mAdc,
environmental standards of
MIL-STD-19500 /228
I
B
= 50 mAdc)
(I
C
= 500 mAdc,
•
RoHS product for packing code suffix "G"
Base–Emitter Saturation Voltage
Halogen free product for packing code suffix "H"
(I
C
= 150 mAdc, I
B
= 15 mAdc)
Mechanical data
= 50 mAdc)
(I
C
= 500 mAdc, I
B
•
Epoxy : UL94-V0 rated flame retardant
•
Low profile surface mounted application in order to
DC Current Gain
better reverse leakage current
)
ON CHARACTERISTICS ( 3
and thermal resistance.
––
––
––
0.012(0.3) Typ.
300
––
0.071(1.8)
0.056(1.4)
Vdc
0.040(1.0)
0.024(0.6)
Molded plastic, SOD-123H
•
Case :
SMALL–SIGNAL CHARACTERISTICS
,
Current–Gain — Bandwidth Product
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
f
T
250
C
cb
C
eb
––
h
ie
1.0
30
––
––
Dimensions in inches and (millimeters)
MHz
pF
pF
kΩ
15
X 10
0.1
8.0
—
14
40
28
40
15
50
1.0
35
50
16
60
42
60
18
80
30
56
1.0
30
40
120
80
15
10
100
70
100
–4
•
•
•
(I
C
=
Method 2026
= 10Vdc, f = 100 MHz)
20 mAdc, V
CE
Collector–Base Capacitance
Polarity : Indicated by cathode band
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Mounting Position : Any
Emitter–Base Capacitance
Weight
(V
Approximated 0.011
= 1.0 MHz)
:
gram
EB
= 0.5 Vdc, I
C
= 0, f
Input Impedance
6.5
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Ratings at 25℃
Voltage Feedback Ratio
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz,
I = 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc,
resistive of inductive load.
C
For capacitive load, derate current by
Gain
20%
Small–Signal Current
Marking Code
RATINGS
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f =
Output Admittance
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
h
re
h
fe
13
h
oe
30
21
30
SYMBOL
1.0 kHz)
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
40
500
Maximum Recurrent Peak Reverse
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
Voltage
V
RRM
Maximum RMS Voltage
12
20
14
µmhos
115
150
105
150
120
200
140
200
Volts
Volts
Volts
SWITCHING CHARACTERISTICS
Maximum DC Blocking Voltage
V
RMS
20
V
DC
Delay Time
Maximum Average Forward Rectified
(V
CC
= 30 Vdc, V
EB
= 2.0 Vdc
Current
I
O
I
C
= 150 mAdc, I
B1
= 15 mAdc)
I
FSM
Storage Time
(V
CC
superimposed on rated load (JEDEC method)
= 30 Vdc, I
C
= 150 mAdc
Peak Forward Surge Current 8.3 ms single half sine-wave
t
d
t
r
t
s
—
—
—
—
Amps
Rise Time
20
225
30
ns
ns
Amps
Fall Time
Typical Thermal Resistance (Note 2)
I
B1
= I
B2
= 15 mAdc)
ΘJA
R
C
J
3.
Temperature
Pulse Width <300
µs;
Duty Cycle
J
<2.0%.
Pulse Test:
Range
Operating
T
Typical Junction Capacitance (Note 1)
Storage Temperature Range
TSTG
t
f
-55 to +150
℃/W
PF
℃
℃
-55 to +125
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+30 V
V
F
0.50
+ 16 V
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.70
1.0 to 100µs,
0.5
DUTY CYCLE = 2%
+30
0.85
V
200Ω
10
1.0 kΩ
0.9
0.92
Volts
1.0 to 100µs,
Maximum Average Reverse Current at @T A=25℃
DUTY CYCLE = 2%
+ 16 V
@T A=125℃
200
Ω
I
R
mAmp
1.0 kΩ
NOTES:
0
0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
– 2.0V
<2.0 ns
2- Thermal Resistance From Junction to Ambient
C
S
* < 10 pF
–14 V
< 20 ns
C
S
*< 10 pF
1N916
– 4.0 V
Scope rise time < 4.0ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2012-11
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
