FM120-M
THRU
MMBT2222ATT1
FM1200-M
General Purpose Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
ON CHARACTERISTICS
(Note 2)
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
DC Current Gain
(I
C
•
Low
mAdc, V
CE
= 10
mounted application in order to
= 0.1
profile surface
Vdc)
(I
C
=
optimize board
= 10 Vdc)
1.0 mAdc, V
CE
space.
= 10 mAdc, V
CE
=
high efficiency.
(I
C
•
Low power loss,
10 Vdc)
(I
C
•
High
mAdc, V
CE
= 10 Vdc)
forward voltage drop.
= 150
current capability, low
= 500
surge capability.
(I
C
•
High
mAdc, V
CE
= 10 Vdc)
•
Guardring for overvoltage protection.
Collector −Emitter Saturation Voltage
(I
C
•
Ultra
mAdc, I
B
= 15
switching.
= 150
high-speed
mAdc)
= 500 mAdc, I
B
= 50 mAdc)
(I
C
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Base −Emitter Saturation
/228
MIL-STD-19500
Voltage
(I
C
•
=
RoHS product for packing code suffix "G"
150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Halogen free product for packing code suffix "H"
SMALL− SIGNAL CHARACTERISTICS
Mechanical data
Current −Gain
:
− Bandwidth Product
retardant
•
Epoxy UL94-V0 rated flame
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
•
Case : Molded plastic, SOD-123H
Output
Terminals :Plated terminals, solderable per MIL-STD-750 ,
•
Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Method 2026
Input
•
Capacitance
Polarity : Indicated by cathode band
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
•
Mounting Position : Any
Input Impedance
•
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
(V
CE
Weight : Approximated 0.011 gram
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
H
FE
SOD-123H
35
50
0.146(3.7)
75
0.130(3.3)
100
40
−
−
−
−
−
0.3
1.0
1.2
2.0
−
0.012(0.3) Typ.
V
CE(sat)
−
−
0.6
−
0.071(1.8)
0.056(1.4)
Vdc
V
BE(sat)
Vdc
f
T
0.031(0.8) Typ.
250
−
−
8.0
0.040(1.0)
0.024(0.6)
MHz
pF
pF
kW
C
obo
0.031(0.8) Typ.
C
Dimensions in inches and (millimeters)
−
30
ibo
h
ie
0.25
1.25
Voltage Feedback Ratio
h
−
4.0
X 10
− 4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
re
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Ratings at 25℃ ambient temperature unless otherwise specified.
Small −Signal Current Gain
h
fe
75
375
−
Single phase half wave, 60Hz, resistive of inductive load.
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
For capacitive load, derate current by 20%
Output Admittance
h
oe
25
200
mmhos
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
Marking Code
12
13
14
15
16
18
10
115
120
Noise Figure
NF
−
80
4.0
100
dB
150
20
30
40
50
60
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
(V
CE
= 10 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k ohms, f = 1.0 kHz)
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
SWITCHING CHARACTERISTICS
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
Delay
Average Forward Rectified Current
Maximum
Time
I
(V
CC
= 3.0
O
Vdc, V
BE
= − 0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
Rise Time
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Storage Time
superimposed on rated load (JEDEC method)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
R
ΘJA
15 mAdc)
B2
=
Typical
Time
Fall
Thermal Resistance (Note 2)
t
d
t
r
t
s
t
f
1.0
−
−
30
−
10
25
225
ns
ns
Amps
Amps
40
−
120
Typical Junction Capacitance (Note 1)
C
J
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
-55 to +125
2. Pulse Test: Pulse
Range
Operating Temperature
Width
≤
300
ms,
Duty Cycle
≤
2.0%.
T
J
Storage Temperature Range
TSTG
60
℃/W
PF
℃
℃
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
I
R
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
