FM120-M
THRU
MMBT2222ATT1
General Purpose Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
NPN Silicon
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
These
power loss, high efficiency.
for general purpose amplifier
•
Low
transistors are designed
applications. They are housed in
forward voltage
package which
•
High current capability, low
the SOT−523
drop.
is designed for low power surface mount applications.
•
High surge capability.
•
Guardring for overvoltage protection.
Features
high-speed switching.
•
Ultra
•
declare that the
planar chip, metal
compliance with
•
We
Silicon epitaxial
material of product
silicon junction.
RoHS requirements.
•
Lead-free parts meet environmental standards of
Pb-Free package is available
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
optimize board space.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
RoHS product for packing code suffix ”G”
Mechanical data
•
Epoxy : UL94-V0
INFORMATION
ORDERING
rated flame retardant
•
Case : Molded plastic, SOD-123H
Device
Maring
Shipping
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
MMBT2222ATT1
Method 2026
3000 / Tape & Ree l
1P
0.031(0.8) Typ.
COLLECTOR
3
1
BASE
2
EMITTER
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
MAXIMUM RATINGS
(T
A
= 25°C)
•
Mounting Position : Any
Symbol
Rating
•
Weight : Approximated 0.011 gram
Collector−Emitter Voltage
V
CEO
Dimensions in inches and (millimeters)
Max
40
Unit
Vdc
MAXIMUM
Collector−Base Voltage
RATINGS AND ELECTRICAL
V
CBO
75
Ratings at 25℃ ambient temperature unless otherwise specified.
Emitter−Base Voltage
V
EBO
6.0
Single phase half wave, 60Hz, resistive of inductive load.
I
C
600
For
Collector Current − Continuous
by 20%
capacitive load, derate current
THERMAL CHARACTERISTICS
RATINGS
Marking Code
Characteristic
Maximum RMS Voltage
T
A
= 25°C
Maximum Recurrent Peak Reverse Voltage
Total Device Dissipation (Note 1)
CHARACTERISTICS
Vdc
Vdc
mAdc
MARKING DIAGRAM
1P M
G
G
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Symbol
Max
Unit
12
13
14
15
16
10
115
120
1
18
20
30
40
50
60
80
100
150
200
Volts
V
RRM
150
P
mW
D
V
RMS
V
DC
14
21
28
35
Maximum DC Blocking Voltage
Thermal Resistance,
Junction−to−Ambient
Maximum Average Forward Rectified Current
I
O
−55 to +150
Operating and Storage Junction
T
J
, T
stg
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
Temperature Range
superimposed on rated load (JEDEC method)
R
qJA
833
20
30
°C/W
40
50
42
1P
M
60
G
°C
1.0
30
56
70
= Specific Device Code
105
= Date Code
100
80
150
= Pb−Free Package
140
Volts
200
Volts
Amp
Amp
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage
CHARACTERISTICS
OFF
Temperature Range
Typical Junction Capacitance (Note 1)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
C
J
R
ΘJA
Characteristic
T
J
TSTG
-55 to +125
Symbol
40
120
Min
Max
-55 to +150
Unit
℃/W
PF
℃
℃
-
65
to +175
Collector −Emitter Breakdown Voltage (Note 1)
V
(BR)CEO
40
−
Vdc
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
(I
C
= 1.0 mAdc, I
B
= 0)
Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
Collector −Base Breakdown Voltage
V
(BR)CBO
75
−
Vdc
0.5
Maximum Average Reverse Current at @T A=25℃
(I
C
= 10
mAdc,
I
E
= 0)
I
R
mAm
10
@T A=125℃
Rated DC Blocking Voltage
Emitter −Base Breakdown Voltage
V
(BR)EBO
6.0
−
Vdc
(I
E
= 10
mAdc,
I
C
= 0)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Base Cutoff Current
2- Thermal Resistance From Junction
Vdc)
(V
CE
= 60 Vdc, V
EB
= 3.0
to Ambient
I
BL
I
CEX
−
−
20
100
nAdc
nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
2012-11
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
