FM120-M
DTA143ZE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
-100
WILLAS
PACKAGE
Pb Free Produc
Features
Package
Typical Characteristics
outline
OFF Characteristics
-10
-30
V
I(ON)
-10
-3
-1
better reverse leakage current and thermal resistance.
V
O
=-0.3V
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
=25
℃
a
MIL-STD-19500
T
/228
•
RoHS product for packing code suffix "G"
T
a
=100
℃
Halogen free product for packing code suffix "H"
SOD-123H
V
CC
=-5V
-3
(V)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(mA)
-1
T
a
=100
℃
INPUT VOLTAGE
I
O
OUTPUT CURRENT
-0.3
0.071(1.8)
0.056(1.4)
T
a
=25
℃
-0.1
-0.3
Mechanical data
-0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
-0.1
•
-0.1
Case : Molded plastic, SOD-123H
-1
-10
-100
-0.3
-30
-3
,
OUTPUT
terminals,
(mA)
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
O
-0.01
-0.2
-0.4
0.031(0.8) Typ.
-0.6
-0.8
-1.0
-1.2
0.031(0.8) Typ.
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
G
I
—— I
•
Mounting Position : Any
O
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
V
O(ON)
——
-1000
I
O
I
O
/I
I
=20
V
O
=-5V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mV)
OUTPUT VOLTAGE
V
0
-300
DC CURRENT GAIN
Ratings at 25℃ ambient
T
a
=100
℃
temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
T =25
℃
For capacitive load, derate current
a
by 20%
30
G
I
RATINGS
-100
T
a
=100
℃
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
10
Maximum RMS Voltage
Maximum DC Blocking Voltage
3
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
12
20
14
20
13
30
21
-30
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
-3
30
40
120
P
D
I
O
18
T
a
=25
℃
10
80
100
56
80
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
1
Peak Forward Surge Current 8.3 ms single half sine-wave
-0.1
-1
-10
-0.3
superimposed on rated load (JEDEC method)
I
OUTPUT CURRENT
-3
-30
-100
-10
-0.1
-10
-30
-100
-0.3
-1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
——
C
O
12
Storage Temperature Range
O
(mA)
OUTPUT CURRENT
(mA)
-55 to +125
400
-55 to +150
V
R
——
T
a
-
65
to +175
(pF)
(mW)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
C
O
8
10
CHARACTERISTICS
350
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
300
0.70
0.5
10
0.85
0.9
0.92
P
D
POWER DISSIPATION
I
R
250
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
6
OUTPUT CAPACITANCE
200
2- Thermal Resistance From Junction to Ambient
4
150
DTA143ZE
100
2
50
0
-0
-4
-8
-12
-16
-20
0
0
25
50
75
100
a
125
150
2012-
0
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC CORP.
T (
℃
WILLAS
)
ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
