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DTA143ZE 参数 Datasheet PDF下载

DTA143ZE图片预览
型号: DTA143ZE
PDF下载: 下载PDF文件 查看货源
内容描述: PNP晶体管数字 [PNP Digital Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 398 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号DTA143ZE的Datasheet PDF文件第2页  
FM120-M
DTA143ZE
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
Features
Mechanical data
isolation to allow negative biasing of the input. They also have the
advantage of
:
almost completely eliminating parasitic effects.
Epoxy UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
Case : Molded plastic, SOD-123H
device design easy
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.035(0.90)
.028(0.70)
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low
Pb-Free package is available
forward voltage drop.
High surge capability.
RoHS product for packing code suffix ”G”
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
Ultra high-speed switching.
Epoxy
Silicon epitaxial
V-0 flammability rating
junction.
meets UL 94
planar chip, metal silicon
Lead-free parts meet environmental standards of
Moisure Sensitivity Level 1
Built-in
MIL-STD-19500
enable the configuration of an inverter circuit
bias resistors
/228
connecting external
code
resistors
without
RoHS product for packing
input
suffix "G"
Halogen free
consist of thin-film resistors
The bias resistors
product for packing code suffix "H"
with complete
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT-523
0.071(1.8)
0.056(1.4)
.067(1.70)
.059(1.50)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.014(0.35)
Dimensions in inches and (millimeters)
.010(0.25)
Polarity : Indicated by cathode
Absolute
maximum ratings @ 25
band
Symbol
Mounting Position : Any
Parameter
V
CC
Supply voltage
Weight : Approximated 0.011 gram
.004(0.10)MIN.
 
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Electrical
Recurrent Peak Reverse Voltage
Maximum
Characteristics @ 25
Marking Code
V
RRM
Symbol
Min
RMS
Typ
14
Max
28
Maximum RMS Voltage
Parameter
V
V
I(off)
-0.5
---
---
Input voltage (V
CC
=-5V, I
O
=-100­A)
Maximum DC Blocking Voltage
40
V
---
DC
---
20
-1.3
V
I(on)
(V
O
=-0.3V, I
O
=-5mA)
V
O(on)
Output voltage (I
Rectified Current
=
---
I
O
---
-0.3
Maximum Average Forward
O
/I
I
-5mA/-0.25mA
 
I
I
=
I
-5V)
Input current (V
---
 
---
-1.8
Peak
ms single
I
O(off)
Forward Surge Current 8.3
=
I
half sine-wave
---
I
FSM
---
Output current (V
CC
=-50V, V 0)
-0.5
G
I
DC
on rated load (JEDEC method)
current gain (V
O
=-5V, I
O
-10mA)
=
80
---
---
superimposed
R
1
Input resistance
3.29
4.7
6.11
 
Typical Thermal Resistance (Note 2)
R
ΘJA
R
2
/R
1
Resistance ratio
8.0
10
12
 
Typical Junction Capacitance (Note 1)
C
J
Transition frequency
f
T
---
T
J
250
---
-55 to
MHz
+125
Operating Temperature
=5mA, f=100MHz)
(V
O
=-10V, I
O
Range
Storage Temperature Range
TSTG
12
20
13
30
21
Unit
V
30
V
V
mA
­A
14
40
15
50
35
50
16
60
42
60
18
80
56
80
1.0
.008(0.20)
.004(0.10)
 
30
40
120
.069(1.75)
.057(1.45)
Typ
Max
Unit
.035(0.90)
-50
---
V
V
V
IN
Input voltage
---
5.0
-100
I
O
Output
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
current
---
---
mA
I
C(MAX)
-100
P
d
Power
ambient temperature unless otherwise specified.
---
---
150
mW
Ratings at 25℃
dissipation
T
j
Junction
wave, 60Hz, resistive of inductive
---
temperature
150
---
Single phase half
load.
T
stg
capacitive load, derate current by 20%
Storage temperature
-55
---
150
For
Min
---
-30
.043(1.10)
10
100
70
100
115
150
105
150
120
200
140
200
 
 
.004(0.10)MAX.
 
-55 to +150
 
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.014(0.35)
.035(0.90)
.028(0.70)
-
65
to +175
V
F
0.50
0.70
0.5
10
.006(0.15)
0.85
0.9
0.92
 
*Marking:
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
E13
@T A=125℃
I
R
Dimensions in inches and (millimeters)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR