SOT-89 Plastic-Encapsulate Transistors
Features
Static Characteristic
WILLAS
BCX53
FM120-M
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
h
FE
FM1200-M
Typical Characteristics
outline
Package
1000
Pb Free Produc
-400
h
FE
—— I
C
V
CE
= -2V
T
a
=100 C
0.146(3.7)
0.130(3.3)
o
better reverse leakage current and thermal resistance.
COMMON
EMITTER
profile surface mounted application in order to
•
Low
=25
℃
T
a
optimize board space.
-2.0mA
-300
-1.8mA
•
Low power loss, high efficiency.
-250
low
•
High current capability,
-1.6mA
forward voltage drop.
-1.4mA
•
High surge capability.
-1.2mA
-200
•
Guardring for overvoltage protection.
-1.0mA
-150
•
Ultra high-speed switching.
-0.8mA
•
Silicon epitaxial planar chip, metal silicon junction.
-0.6mA
-100
•
Lead-free parts meet environmental standards of
-0.4mA
-50
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
I
B
=-0.2mA
-0
Halogen
-1
free product for packing code suffix "H"
-6
-0
-2
-3
-4
-5
-350
SOD-123H
I
C
(mA)
DC CURRENT GAIN
0.012(0.3) Typ.
COLLECTOR CURRENT
100
T
a
=25 C
0.071(1.8)
0.056(1.4)
o
10
-1
COLLECTOR-EMITTER
Mechanical data
VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
-100
I
C
(mA)
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
•
Epoxy : UL94-V0 rated
—— I
C
retardant
V
BEsat
flame
-400
-1000
•
Case : Molded plastic, SOD-123H
β=10
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
-800
V
CEsat
——
β=10
0.031(0.8) Typ.
I
C
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method
℃
2026
T =25
a
-300
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
-400
-600
Dimensions in inches and (millimeters)
-200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T =100
℃
-100
-200
a
T
a
=100
℃
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
-0
For capacitive load, derate current
-10
20%
by
-0.1
-1
-100
-1000
RATINGS
Marking Code
150
T
a
=25
℃
-0
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
SYMBOL
COLLECTOR CURRENT I
(mA)
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH
C
FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
(MHz)
f
T
——
I
C
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
V
CE
=-5V
T
a
=25 C
12
20
14
(pF)
1000
13
30
21
30
14
40
28
40
C
ob
/
15
ib
C
50
16
18
—— V
CB
/
V
EB
60
60
1.0
C
ib
30
C
ob
80
56
80
Maximum RMS Voltage
Maximum DC Blocking Voltage
35
50
42
f=1MHz
70
I
E
=0 / I
C
=0
T
a
=25 C
o
10
100
100
115
150
105
150
120
200
140
200
20
TRANSITION FREQUENCY
C
Maximum Average Forward Rectified Current
100
f
T
100
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CAPACITANCE
Typical Thermal Resistance (Note 2)
50
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
10
T
J
-55 to +125
1
-0.1
40
120
-55 to +150
-
65
to +175
-1
TSTG
o
0
-0
CHARACTERISTICS
I
C
——
-20
-40
-60
-80
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
NOTES:
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE V (V)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
-100
-10
-20
Maximum Average Reverse Current at @T A=25℃
-1000
@T A=125℃
V
BE
V
F
I
R
COLLECTOR POWER DISSIPATION
P
c
(W)
0.75
0.50
P
c
0.70
——
T
a
0.85
0.9
0.92
0.5
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
-100
0.50
2- Thermal Resistance From Junction to Ambient
o
Ta=100 C
-10
Ta=25
℃
-1
0.25
VCE=-2V
2012-06
-0
-0.1
0.00
-200
-400
-600
-800
-1000
0
25
50
75
BASE-EMITTER VOLTAGE
V
BE
(mV)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC COR
100
125
150
T
a
(
℃
)
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
