SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse
TRANSISTOR (PNP)
leakage current and thermal resistance.
•
Low profile surface mounted application in order to
WILLAS
BCX53
FM120-M
THRU
FM1200-M
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
FEATURES
Low power loss, high efficiency.
•
•
High current
is available
Pb-Free package
capability, low forward voltage drop.
High surge capability.
RoHS
•
product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product
switching.
•
Ultra high-speed
for packing code suffix “H”
•
Silicon
Low Voltage
epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
High Current
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
APPLICATIONS
Medium Power General Purposes
Mechanical data
Driver
•
Stages
UL94-V0 rated flame retardant
Epoxy :
of Audio Amplifiers
MARKING:BCX53:AH, BCX53-10:AK, BCX53-16:AL
•
Case : Molded plastic, SOD-123H
•
Terminals :Plated terminals, solderable per MIL-STD-750
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Method 2026
,
optimize board space.
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1. BASE
2. COLLECTOR
3. EMITTER
0.040(1.0)
0.024(0.6)
Halogen free product for packing code suffix "H"
0.031(0.8) Typ.
0.031(0.8) Typ.
Symbol
•
Polarity : Indicated by cathode band
Parameter
V
CBO
V
CEO
V
EBO
Value
-100
-80
-5
-1
500
250
12
20
14
13
30
21
14
40
28
Unit
V
V
V
Dimensions in inches and (millimeters)
•
Mounting Position : Any
Collector-Base Voltage
•
Weight : Approximated 0.011 gram
Collector-Emitter Voltage
Emitter-Base Voltage
I
C
Ratings at
Collector Current
25℃ ambient temperature unless otherwise specified.
Thermal Resistance From Junction To Ambient
R
For capacitive load, derate current by 20%
θJA
T
stg
Marking Code
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
A
mW
℃/W
℃
℃
50
15
16
60
18
80
56
80
1.0
Typ
30
40
120
10
100
70
100
115
150
105
150
120
200
140
200
Collector Power Dissipation
P
C
Single phase half wave, 60Hz, resistive of inductive load.
T
j
RATINGS
Junction Temperature
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
150
Maximum Recurrent Peak Reverse Voltage
Storage Temperature
V
RRM
V
RMS
I
O
-55~+150
unless otherwise specified)
50
ELECTRICAL CHARACTERISTICS (T
a
=25℃
V
DC
Maximum DC Blocking Voltage
20
30
40
Maximum Average Forward Rectified Current
Maximum RMS Voltage
35
42
60
Parameter
Collector-base breakdown voltage
superimposed on rated load (JEDEC method)
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
1)
Typical Junction Capacitance (Note
Operating Temperature Range
Collector cut-off current
Typical Thermal Resistance (Note 2)
Peak Forward Surge Current 8.3 ms single half sine-wave
Symbol
T est
conditions
Min
-100
-80
-5
Max
Unit
V
V
V
V
(BR)CBO
I
FSM
I
C
=-100µA,I
E
=0
V
(BR)CEO*
V
(BR)EBO
C
J
I
E
=-100µA,I
C
=0
I
CBO
I
EBO
TSTG
R
ΘJA
I
C
=-10mA,I
B
=0
-0.1
0.85
250
Emitter cut-off current
Storage Temperature Range
T
J
V
CB
=-30V,I
-55 to +125
E
=0
-
65
to +175
-55
-0.1
to +150
µA
V
EB
=-5V,I
C
=0
0.70
63
µA
0.9
0.92
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
DC current gain
Rated DC Blocking Voltage
h
FE(1)*
V
FM120-MH
FM130-MH
63
SYMBOL
CE
=-2V, I
C
=-5mA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
0.50
h
FE(2)*
V
F
V
CE
=-2V, I
C
=-150mA
Maximum Average Reverse Current at @T A=25℃
Collector-emitter saturation voltage
NOTES:
Base -emitter voltage
@T A=125℃
h
FE(3)*
I
R
V
CE
=-2V, I
C
=-0.5A
I
C
=-0.5A,I
B
=-50mA
V
CE
=-2V, I
C
=-0.5A
V
CE
=-5V,I
C
=-10mA, f=100MHz
V
BE*
f
T
40
0.5
10
V
CE(sat)*
-0.5
-1
V
V
MHz
Transition frequency
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
50
CLASSIFICATION OF
h
FE(2)
RANK
RANGE
BCX53
63–250
BCX53-10
63–160
BCX53-16
100–250
* Pulse Test
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.