WILLAS
General Purpose Transistors
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
SOT-23
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
.122(3.10)
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
.106(2.70)
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
BC
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
LT1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
.006(0.15)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.083(2.10)
.110(2.80)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
ry
.008(0.20)
.003(0.08)
.055(1.40)
.035(0.89)
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
30
-55 to +125
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
Pr
el
12
20
14
.004(0.10)MAX.
RATINGS
im
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ina
V
RRM
V
RMS
20
I
FSM
T
J
TSTG
•
Polarity : Indicated by cathode band
: Any
•
Mounting Position
.080(2.04)
.070(1.78)
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
V
DC
.020(0.50)
I
O
.012(0.30)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Dimensions
R
ΘJA
in inches and (millimeters)
C
J
0.037
0.95
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.037
0.95
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.035
0.079
2.0
0.9
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
