WILLAS
General Purpose Transistors
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
optimize board space.
•
Low power loss, high efficiency.
Characteristic
Symbol
Min
•
High current capability, low forward voltage drop.
ON CHARACTERISTICS
•
High
Current
capability.
DC
surge
Gain
h
FE
•
Guardring for overvoltage protection.
50
( I
C
= 100
µAdc,
V
CE
= 10 Vdc )
•
Ultra high-speed switching.
( I
C
= 10 mAdc, V = 1.0 Vdc )
110
planar chip, metal silicon junction.
•
Silicon epitaxial
CE
160
( I
C
= 100 mAdc, V
CE
= 1.0 Vdc )
•
Lead-free parts meet environmental standards of
( I
C
= 300 mAdc, V
CE
=
60
MIL-STD-19500 /228
2.0 Vdc )
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix
SM
SMALL–SIGNAL CHARACTERISTICS
"H"
BC
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
LT1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
Typ
0.146(3.7)
0.130(3.3)
Max
Unit
0.012(0.3) Typ.
—
—
—
—
—
—
—
400
—
0.071(1.8)
0.056(1.4)
Mechanical data
Product
Current–Gain — Bandwidth
ry
—
—
—
0.031(0.8) Typ.
(I
C
= 20mAdc, V
rated
Vdc, f
retardant
•
Epoxy : UL94-V0
CE
= 10
flame
= 100 MHz)
Output Capacitance
•
Case : Molded plastic, SOD-123H
C
obo
,
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
•
Terminals :Plated terminals, solderable per MIL-STD-750
f
T
100
—
—
—
—
12
80
0.040(1.0)
MHz
0.024(0.6)
pF
pF
dB
0.031(0.8) Typ.
ina
—
—
CHARACTERISTICS
—
—
—
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
20
R
ΘJA
C
J
T
J
TSTG
•
•
•
Weight : Approximated 0.011 gram
SWITCHING CHARACTERISTICS
Input Capacitance
Method 2026
C
ibo
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Polarity : Indicated by cathode band
Noise Figure
NF
Mounting
Vdc, I
C
= 0.2
Any
R
S
= 1.0 kΩ, f = 1.0 kHz)
(V
CE
= 5.0
Position :
mAdc,
Dimensions in inches and (millimeters)
10
im
Turn–On Time
t
on
RATINGS AND ELECTRICAL
(I
B1
= I
MAXIMUM
C
= 150mAdc, R
L
= 150Ω)
B2
= 15 mAdc,I
Ratings at 25℃ ambient temperature unless otherwise specified.
Turn–Off Time
t
off
Single phase
= I
B2
= 15 mAdc,I
C
resistive of inductive load.
(I
B1
half wave, 60Hz,
= 150mAdc, R
L
= 150Ω)
For capacitive load, derate current by 20%
RATINGS
Marking Code
100
400
ns
ns
Pr
el
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
