WILLAS
General Purpose Transistors
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application
unless otherwise noted) (Continued)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C
in order to
optimize board space.
Characteristic
Symbol
Min
•
Low power loss, high efficiency.
ON CHARACTERISTICS
•
High current capability, low forward voltage drop.
DC Current
capability.
h
FE
•
High surge
Gain
( I
C
= 100
µAdc,
V
CE
= 10 Vdc )
35
•
Guardring for overvoltage protection.
( I
C
=
high-speed
= 1.0 Vdc
75
•
Ultra
10 mAdc, V
CE
switching.
)
( I
C
= 100 mAdc, V
CE
= 1.0 Vdc
100
•
Silicon epitaxial planar chip,
)
metal silicon junction.
( I
C
= 500 mAdc,
meet environmental standards of
35
•
Lead-free parts
V
CE
= 2.0 Vdc )
MIL-STD-19500
Saturation Voltage
Collector–Emitter
/228
V
CE(sat)
product for packing code
•
RoHS
500 mAdc, I
B
= 50 mAdc )
suffix "G"
( I
C
=
—
Halogen free product for packing code suffix "H"
( I
C
= 100 mAdc, I
B
= 10 mAdc )
—
Mechanical data
Base–Emitter Saturation Voltage
V
BE(sat)
•
Epoxy : UL94-V0 rated
mAdc )
retardant
( I
C
= 500 mAdc, I
B
= 50
flame
—
BC
Package outline
SOD-123H
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
LT1
THRU
FM1200-M
Pb Free Produ
Features
Typ
0.146(3.7)
0.130(3.3)
Max
Unit
0.012(0.3) Typ.
—
—
—
—
—
0.7
0.3
—
—
220
250
—
—
—
Vdc
0.040(1.0)
2.0
0.024(0.6)
0.071(1.8)
0.056(1.4)
Vdc
ry
0.031(0.8) Typ.
•
Case : Molded
CHARACTERISTICS
SM
SMALL–SIGNAL
plastic, SOD-123H
,
Current–Gain — Bandwidth Product
•
Terminals :Plated terminals, solderable per MIL-STD-750
(I
C
= 20mAdc, V
CE
=
2026
Method
10 Vdc, f = 100 MHz)
Output Capacitance
•
Polarity : Indicated by cathode band
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
•
Mounting Position : Any
Input Capacitance
•
Weight
0.5 Vdc, I = 0, f =
0.011 gram
: Approximated
(V =
1.0 MHz)
EB
C
0.031(0.8) Typ.
f
T
100
—
—
—
—
MHz
pF
ina
C
obo
C
ibo
—
—
—
CHARACTERISTICS
—
V
RMS
14
21
30
28
40
35
50
R
ΘJA
C
J
T
J
TSTG
Dimensions in inches and (millimeters)
12
80
10
pF
dB
Ordering Information
Maximum RMS Voltage
Maximum DC Blocking Voltage
Pr
el
Single phase half wave, 60Hz, resistive of inductive load.
Turn–On Time
—
—
100
ns
t
on
For capacitive load, derate current by 20%
(I
B1
= I
B2
= 15 mAdc)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Turn–Off Time
—
—
400
ns
t
off
Marking Code
= 150 mAdc, R
L
= 150
Ω
)
12
13
14
15
16
18
10
115
120
(I
C
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
42
60
1.0
30
56
80
70
100
105
150
140
200
20
V
DC
Shipping
Maximum Average Forward Rectified Current
I
O
BCW65ALT1
EA
3000/Tape&Reel
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
SWITCHING CHARACTERISTICS
Device
Marking
im
Noise Figure
NF
MAXIMUM RATINGS AND ELECTRICAL
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Ratings at 25℃ ambient temperature unless otherwise specified.
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
