WILLAS
General Purpose Transistors
Features
BC
Package outline
SOD-123H
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
LT1
THRU
FM1200-M
Pb Free Produc
NPN Silicon
design, excellent power dissipation offers
•
Batch process
better
Featrues
reverse leakage current and thermal resistance.
We declare that the material of product
optimize board space.
compliance with
loss, high efficiency.
•
Low power
RoHS requirements.
•
Low profile surface mounted application in order to
Pb-Free package is available
•
High current capability, low forward voltage drop.
RoHS product for packing code suffix ”G”
•
High surge capability.
Halogen free product for packing code suffix “H”
•
Guardring for overvoltage protection.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
•
Ultra
RATINGS
MAXIMUM
high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
Rating
Symbol
Value
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
32
Collector–Emitter Voltage
V
CEO
RoHS product for packing code suffix "G"
•
Halogen free product
Collector–Base Voltage
for packing
CBO
suffix "H"
V
code
60
0.071(1.8)
0.056(1.4)
Unit
Vdc
Vdc
Vdc
mAdc
SOT–23
0.040(1.0)
0.024(0.6)
ry
,
0.031(0.8) Typ.
Emitter–Base Voltage
V
EBO
•
Epoxy : UL94-V0 rated flame retardant
Collector Current — Continuous
I
C
•
Case : Molded plastic, SOD-123H
Mechanical data
5.0
800
3
COLLECTOR
0.031(0.8) Typ.
THERMAL CHARACTERISTICS
Method 2026
•
Terminals :Plated terminals, solderable per MIL-STD-750
Symbol
P
D
ina
225
1.8
mW
mW/°C
V
RMS
V
DC
14
21
30
28
40
35
50
20
I
FSM
Characteristic
•
Polarity : Indicated by cathode band
Total Device Dissipation
:
FR– 5 Board, (1)
•
Mounting Position Any
T
A
= 25°C
•
Weight : Approximated 0.011 gram
Derate above 25°C
Max
Unit
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
Maximum RMS Voltage
DEVICE MARKING
Pr
el
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Total Device Dissipation
300
mW
P
D
Ratings at 25℃ ambient temperature unless otherwise specified.
Alumina Substrate, (2) T
A
= 25°C
Single phase half wave, 60Hz, resistive of inductive load.
2.4
mW/°C
Derate above 25°C
For capacitive load, derate current by 20%
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
,
FM120-M
H FM130-MH
FM140-MH
°C
RATINGS
Junction and Storage Temperature
T
J
T
stg
–55 to +150
Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
RRM
im
42
60
1.0
30
40
120
56
80
70
100
105
150
140
200
BCW65ALT1
Voltage
Maximum DC Blocking
= EA
Maximum Average Forward Rectified Current
(T = 25°C
I
unless otherwise noted.)
O
ELECTRICAL CHARACTERISTICS
A
Peak Forward Surge Current 8.3 ms single half sine-wave
Characteristic
Symbol
superimposed on rated load (JEDEC method)
Unit
Min
Typ
Max
Typical Thermal Resistance (Note 2)
Typical
Collector–Emitter Breakdown Voltage
Junction Capacitance (Note 1)
Operating
= 10mAdc, I
B
Range
(I
C
Temperature
= 0 )
Storage Temperature Range
OFF CHARACTERISTICS
R
ΘJA
C
J
V
(BR)CEO
T
J
TSTG
32
Vdc
-55 to +125
—
—
-55 to +150
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
V
EB
= 0 )
CHARACTERISTICS
V
(BR)CES
V
F
(BR)EBO
60
0.50
—
-
65
to +175
—
Vdc
0.70
—
0.85
0.5
10
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A
Voltage
Emitter–Base Breakdown
DC
Rated DC Blocking Voltage
V
Maximum
= 10
µAdc,
I
C
= 0)
(I
E
Average Reverse Current at @T A=25℃
Collector Cutoff Current
@T A=125℃
I
R
5.0
—
Vdc
I
CES
—
—
—
—
—
—
20
20
20
NOTES:
CE
= 32 Vdc, I
E
= 0 )
(V
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
nAdc
µAdc
nAdc
2- Thermal Resistance From Junction to Ambient
(V
CE
= 32 Vdc, I
E
= 0 , T
A
= 150°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
