SOT-23 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
BAV70
FM120-M
BAV99
THRU
BAW56
FM1200-M
Pb Free Product
Package outline
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Forward Characteristics
300
•
High current capability, low forward voltage drop.
•
High surge capability.
Guardring for overvoltage protection.
•
100
•
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
•
30
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
10
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ta
=1
00
℃
Ta
=2
5
℃
3
Mechanical data
Typical Characteristics
1000
SOD-123H
Reverse
0.146(3.7)
Characteristics
0.130(3.3)
0.012(0.3) Typ.
300
(mA)
(nA)
Ta=100
℃
100
0.071(1.8)
0.056(1.4)
I
F
FORWARD CURRENT
REVERSE CURRENT I
R
30
•
Epoxy : UL94-V0 rated flame retardant
1
•
Case : Molded plastic, SOD-123H
,
•
0.3
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
10
Ta=25
℃
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
3
•
0.10.0
Polarity : Indicated by cathode band
1.2
0.4
0.8
FORWARD
•
Mounting Position : Any
VOLTAGE V (V)
•
Weight : Approximated 0.011 gram
F
1.6
1
0
Dimensions in inches and (millimeters)
20
40
60
REVERSE VOLTAGE
V
R
(V)
80
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
Capacitance Characteristics
load.
60Hz, resistive of inductive
1.4
For capacitive load, derate current by 20%
Ta=25
℃
RATINGS
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
f=1MHz
300
Power Derating Curve
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
1.3
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
(mW)
Marking Code
12
20
14
20
13
30
21
30
250
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
P
D
200
V
1.2
POWER DISSIPATION
V
150
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
100
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.0
1.1
20
50
-55 to +150
75
100
125
150
℃
-55 to +125
0
0
25
50
0
5
10
15
-
65
to +175
AMBIENT TEMPERATURE Ta (
℃
)
REVERSE VOLTAGE V
R
(V)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
I
R
0.5
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
