SOT-23 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process
SWITCHING DIODE
design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
profile surface mounted application in order to
•
Low
optimize board space.
Fast Switching Speed
•
Low power loss, high efficiency.
For General Purpose Switching Applications
•
High current capability, low forward voltage drop.
High surge capability.
High
•
Conductance
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS
Silicon epitaxial planar chip, metal silicon junction.
•
product for packing code suffix ”G”
•
Lead-free parts meet
packing code suffix “H”
Halogen free product for
environmental standards of
Moisture Sensitivity Level 1
suffix "G"
•
RoHS product for packing code
Halogen free product for packing code suffix "H"
MIL-STD-19500 /228
WILLAS
BAV70
FM120-M
BAV99
THRU
BAW56
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity Indicated by
BAV70
band
cathode
BAW56 Marking:
:
A1
Marking: A4
•
Mounting Position : Any
Maximum Ratings @Ta=25℃
•
Weight : Approximated 0.011 gram
BAV99 Marking: A7
Dimensions in inches and (millimeters)
Parameter
RATINGS AND ELECTRICAL CHARACTERISTICS
Symbol
Limit
MAXIMUM
Ratings at 25℃
V
R
Reverse Voltage
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
I
F
Forward Current
load, derate current by 20%
For capacitive
RATINGS
Peak Forward Surge Current
Unit
V
mA
18
80
56
80
10
100
70
100
115
mW
150
105
℃/W
150
120
200
140
200
70
200
500
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
mA
I
FM(surge)
V
RRM
V
DC
I
O
Power Dissipation
Marking Code
Maximum Recurrent Peak Reverse Voltage
P
D
12
20
20
13
30
21
30
14
40
28
40
15
16
225
50
60
35
556
42
50
1.0
-55~+150
30
60
V
Maximum RMS Voltage
Thermal Resistance Junction to Ambient
V
RMS
θJA
14
R
V
Junction Temperature
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T
J
150
℃
℃
V
A
Storage Temperature Range
T
STG
I
FSM
R
ΘJA
A
Electrical Characteristics @Ta=25℃
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Typical Junction Capacitance (Note 1)
Min
70
0.715
Typ
-55 to +125
Max
Parameter
Symbol
T
J
C
J
Unit
V
40
120
Conditions
-55 to +150
℃
Storage
breakdown voltage
Reverse
Temperature Range
CHARACTERISTICS
V
TSTG
R
V
SYMBOL
F1
V
F2
V
F
V
F3
V
F4
I
R
-
I
65
to +175
R
=100μA
V
I
F
=1mA
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
0.50
0.855
Forward voltage
Reverse Current at @T A=25℃
Maximum Average
Rated DC Blocking Voltage
Maximum Forward Voltage at 1.0A DC
V
0.70
I
F
=10mA
V
V
μA
pF
ns
I
F
=50mA
10
I
F
=150mA
V
R
=70V
0.5
0.85
0.9
0.92
V
@T A=125℃
1
1.25
2.5
1.5
6
m
I
R
Reverse current
and applied reverse voltage of 4.0 VDC.
1- Measured at 1 MHZ
NOTES:
Capacitance between terminals
Reverse recovery time
2- Thermal Resistance From Junction to Ambient
C
T
t
rr
V
R
=0,f=1MHz
I
F
= I
R
= 10mA,
Irr= 0.1 x I
R
, R
L
= 100Ω
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
