200mA
Surface Mount
Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Package
SOD-323
RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
THRU
PACKAGE
BAS20H
FM1200-M
Pb Free Produc
Features
820
Ω
better
Package outline
reverse leakage current and thermal resistance.
SOD-123H
I
F
t
p
t
•
Low profile surface mounted application in order to
t
r
2.0 k
+10 V
0.1
µF
optimize board
I
F
space.
100
µH
t
0.146(3.7)
t
rr
10%
•
Low power loss, high efficiency.
0.1
µF
0.130(3.3)
0.012(0.3) Typ.
•
High current capability, low forward voltage drop.
D.U.T.
•
High surge capability.
50
Ω
Input
50
Ω
Output
Pulse
Guardring for overvoltage
Sampling
protection.
•
90%
Generator
Oscilloscope
i
R(REC)
= 3.0 mA
0.071(1.8)
•
Ultra high-speed switching.
0.056(1.4)
OUTPUT PULSE
I
R
•
Silicon epitaxial planar chip, metal silicon junction.
V
R
INPUT SIGNAL
(I
F
= I
R
= 30 mA; MEASURED
•
Lead-free parts meet environmental standards of
at i
R(REC)
= 3.0 mA)
MIL-STD-19500 /228
Notes:
1. 2.0
suffix "G"
•
RoHS product for packing
A
code
kΩ variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes:
2. Input pulse is adjusted
Halogen free product for packing code suffix "H"
so I
R(peak)
is equal to 30 mA.
Notes :
3. t
Mechanical data
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1000
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
I
R
, REVERSE CURRENT (µ A)
100
I
F
, FORWARD CURRENT (mA)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
100
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.1
1.0
10
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.0
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum
0.1
RMS Voltage
0
0.2
V
RRM
1.0
12
20
1.4
13
30
30
0.01
14
40
0
15
50
35
100
16
60
42
150
18
80
56
200
10
100
250
115
150
300
120
200
140
200
Maximum DC Blocking Voltage
0.4
0.6
0.8
V
RMS
1.2
V
DC
14
20
0.001
21
28
40
50
70
105
150
Maximum Average Forward Rectified Current
V
F
, FORWARD VOLTAGE (V)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Figure 2. Forward Current
I
O
I
FSM
R
ΘJA
C
J
50
60
80
100
V
R
, REVERSE VOLTAGE (V)
1.0
Figure 3. Leakage Current
30
40
120
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
1.8
2.0
3.1
3.0
2.9
2.8
V
F
, FORWARD VOLTAGE (V)
-55 to +150
C
T
, TOTAL CAPACITANCE (pF)
Operating
1.6
Temperature Range
f = 1 MHz
T
J
-55 to +125
-
65
to +175
Storage Temperature Range
1.4
1.2
CHARACTERISTICS
I
E
= 0 A
TSTG
T
A
= 25°C
V
F
I
R
Maximum
1.0
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.6
0.4
0.2
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
2.7
0.50
Maximum
0.8
Average Reverse Current at @T A=25℃
2.6
2.5
2.4
2.3
2.2
0.70
0.85
0.9
0.92
0.5
10
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0
0
5.0
10
15
20
25
30
35
0
25
50
75
100
125
150
175
200
225
250
V
R
, REVERSE VOLTAGE (V)
I
F
, FORWARD CURRENT (mA)
Figure 4. Total Capacitance
Figure 5. Forward Voltage
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
