200mA
Surface Mount
Switching Diode-200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Package
SOD-323
RECTIFIERS -20V- 200V
SOD-123
PACKAGE
WILLAS
FM120-M
THRU
BAS20H
FM1200-M
Pb Free Produc
High Voltage
and thermal resistance.
better reverse leakage current
optimize board space.
Switching Diode
•
Low power loss, high efficiency.
•
Batch process design, excellent power dissipation offers
•
Low profile surface mounted application in order to
SOD-123H
Features
Package outline
•
High current capability, low forward voltage drop.
•
High surge capability.
We declare that the material of
•
Guardring for overvoltage protection.
product
•
Ultra high-speed switching.
requirements.
compliance with RoHS
•
Silicon epitaxial planar chip, metal silicon junction.
Pb-Free package is available
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
packing code suffix ”G”
RoHS product for
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
Polarity : Indicated by cathode band
Device
Marking
•
Mounting Position : Any
BAS20H
JR
•
Weight : Approximated 0.011 gram
Moisture Sensitivity
Mechanical data
Level 1
Polarity:
Color band denotes cathode end
Halogen free product for packing code suffix "H"
1
CATHODE
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD– 323
2
ANODE
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Ordering
Method 2026
Information
Shipping
3000/Tape&Reel
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
Ratings at 25℃
Rating
temperature unless otherwise specified.
ambient
Symbol
Single phase half wave, 60Hz, resistive of inductive load.
Continuous Reverse Voltage
V
R
For capacitive load, derate current by 20%
Peak Forward Current
I
F
Peak Forward Surge Current
RATINGS
Marking Code
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
THERMAL CHARACTERISTICS
Value
200
200
13
30
21
14
40
Unit
Vdc
mAdc
15
50
35
Unit
50
mW
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
625
mAdc
SYMBOL
I
FM(surge)
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM120-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
12
20
14
Symbol
P
D
20
Maximum DC Blocking Voltage
Total Device Dissipation FR–5 Board,*
Maximum Average
25°C
T
A
=
Forward Rectified Current
Characteristic
30
200
40
Max
28
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Derate above 25°C
1.57
R
θJA
T
J
, T
stg
635
–55 to+150
mW/°C
°C/W
°C
Typical Thermal Resistance (Note 2)
Thermal Resistance Junction to Ambient
Junction and Storage
Typical Junction Capacitance (Note 1)
Temperature Range
*FR–5 Minimum Pad
Operating Temperature Range
-55 to +150
-55 to +125
T
J
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Storage Temperature Range
TSTG
Min
-
65
to +175
Max
Unit
0.70
Characteristic
Symbol
I
R
Maximum Forward Voltage at 1.0A DC
Current
Reverse Voltage Leakage
Maximum Average Reverse Current at @T A=25℃
(V
R
= 200 Vdc)
CHARACTERISTICS
OFF CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
I
R
0.50
0.85
µAdc
0.9
0.92
(V
R
=
Voltage
@T
Rated DC Blocking
200 Vdc, T
J
= 150°C)
A=125℃
NOTES:
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100
Ω)
V
(BR)
V
F
–
–
200
1.0
0.5
100
10
–
Vdc
mV
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
C
D
t
rr
–
–
–
–
1000
1250
5.0
50
pF
ns
2012-06
WILLAS ELECTRONIC COR
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
