SOD-523 Plastic-Encapsulate
RECTIFIERS -20V- 200V
Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Forward
•
High surge capability.
Characteristics
150
Guardring for overvoltage protection.
•
100
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
T=
a
1
00
℃
WILLAS
FM120-M
BAS16X
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Typical Characteristics
1000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse
Characteristics
T
a
=100
℃
0.071(1.8)
0.056(1.4)
(mA)
T=
a
2
5
℃
Mechanical data
1
REVERSE CURRENT I
R
•
FORWARD CURRENT
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
(nA)
10
I
F
100
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
0.1
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
10
0.031(0.8) Typ.
T
a
=25
℃
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
0.01
Position : Any
•
Mounting
0.2
0.0
0.4
0.6
0.8
•
Weight : Approximated 0.011 gram
(V)
FORWARD VOLTAGE V
F
Dimensions in inches and (millimeters)
1.0
1.2
1
0
20
40
60
80
REVERSE VOLTAGE
V
R
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Capacitance Characteristics
1.2
RATINGS
Marking Code
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
T =25
℃
f=1MHz
12
a
200
Power Derating Curve
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(mW)
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
15
SYMBOL
20
14
20
13
30
21
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
115
150
105
150
120
200
140
Vo
150
42
60
1.0
30
40
120
Vo
P
D
30
80
100
200
Vo
POWER DISSIPATION
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.0
100
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
50
-55 to +150
℃
P
-55 to +125
-
65
to +175
℃
℃
0.8
0
5
10
CHARACTERISTICS
20
0
25
50
100
125
150
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
75
FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0
REVERSE VOLTAGE V
R
(V)
Maximum Forward Voltage at 1.0A DC
V
F
I
R
0.50
AMBIENT TEMPERATURE
0.85
(
℃
)
T
a
0.70
0.9
0.92
Vo
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.5
10
@T A=125℃
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
