SOD-523 Plastic-Encapsulate Diodes
Swithching Diode
Features
•
Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
High-Speed Switching Applications
in order to
•
Low profile surface mounted application
optimize board space.
Lead Finish: 100% Matte Sn ( Tin )
•
Low power loss, high efficiency.
Qualified Reflow Temperature: 260
℃
drop.
•
High current capability, low forward voltage
•
High surge capability.
Extremely Small SOD-523 Package
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
•
Silicon epitaxial
for packing code suffix ”G”
RoHS product
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
RoHS product for packing code
1
Moisture Sensitivity Level
suffix "G"
Halogen
Color band
packing code suffix "H"
Polarity:
free product for
denotes cathode end
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
BAS16X
THRU
FM1200-M
Pb Free Product
Package outline
SOD-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
MARKING: A6
UL94-V0 rated flame retardant
•
Epoxy :
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
Method 2026
Symbol
V
R
I
F
Limit
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Unit
V
mA
mA
mW
℃/W
℃
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Current
Forward
Weight : Approximated 0.011 gram
DC Reverse Voltage
75
Dimensions in inches and (millimeters)
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
500
Pak Forward Surge Current
I
FM(surge)
Ratings at 25℃ ambient temperature unless otherwise specified.
Total Device
half wave, 60Hz, resistive of inductive load.
P
D
Single phase
Dissipation
For capacitive load, derate current by 20%
150
833
15
50
35
50
Thermal Resistance Junction to Ambient
RATINGS
JA
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
R
θ
Junction and Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Marking Code
V
RRM
V
RMS
V
DC
I
O
T
j
,T
stg
12
20
14
20
13
30
21
30
14
40
28
40
150
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Electrical Ratings @Ta=25℃
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Maximum RMS Voltage
Vo
Vo
Parameter
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC
Reverse breakdown voltage
method)
Symbol
V
(BR)
I
FSM
R
ΘJA
T
J
Min
75
Typ
Max
Unit
Conditions
I
R
=100uA
Am
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
V
F1
C
J
-55 to +125
715
I
F
=1mA
-55 to +150
℃/
P
855
mV
Forward voltage
V
F2
TSTG
V
SYMBOL
F3
V
F4
t
rr
V
F
I
R
℃
-
65
to +175
I
F
=10mA
℃
1000
I
F
=50mA
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
0.50
0.70
0.5
10
0.85
0.9
0.92
Vo
1250
6.0
1.0
1.75
2.0
45
ns
μA
V
pF
pC
I
F
=150mA
Reverse recovery Time
NOTES:
Rated DC Blocking Voltage
@T A=125℃
mA
I
F
=I
R
=10mAdc,R
L
=50Ω
V
R
=75V
I
F
=10mA, t
r
= 20ns
V
R
=0V,f=1MH
Z
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse current
I
R
Forward
recovery
voltage
Diode capacitance
Stored charge
2- Thermal Resistance From Junction to Ambient
V
FR
C
D
Q
S
I
F
=10mA, V
R
=5.0V ,R
L
=500Ω
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
