WILLAS
SOT-323 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
power
offers
better reverse leakage
and thermal resistance.
9
•
Low profile surface mounted application in order to
32uA
optimize board space.
28uA
•
Low power loss, high efficiency.
24uA
•
High
6
current capability, low forward voltage drop.
20uA
•
High surge capability.
16uA
•
Guardring for overvoltage protection.
12uA
•
Ultra
3
high-speed switching.
8uA
•
Silicon epitaxial planar chip, metal silicon junction.
=4uA
•
Lead-free parts meet environmental standards
I
B
of
0
MIL-STD-19500 /228
0
2
4
6
8
•
RoHS product for packing code suffix "G"
V
CE
(V)
COLLECTOR-EMITTER VOLTAGE
Halogen free product for packing code suffix "H"
(mA)
36uA
current
I
C
COLLECTOR CURRENT
•
Batch process
Features
12
Static Characteristic
40uA
design, excellent
SOD-123
PACKAGE
Typical Characterisitics
1000
FM120-M
2SC4081xT1
THRU
FM1200-M
I
C
COMMON
EMITTER
dissipation
T
a
=25
℃
Package outline
T
a
=100
℃
h
FE
——
Pb Free Product
SOD-123H
h
FE
DC CURRENT GAIN
T
a
=25
℃
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
10
0.5
COMMON EMITTER
V
CE
=6V
1
10
100
150
COLLECTOR CURRENT
I
C
(mA)
V
Mechanical data
1.0
BEsat
——
I
C
1
V
CEsat
——
I
C
0.040(1.0)
0.024(0.6)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.8
,
•
Terminals :Plated terminals,
℃
T =25
solderable per MIL-STD-750
a
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
T
a
=100
℃
0.6
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
0.4
0.1
Dimensions in inches and (millimeters)
T
a
=100
℃
T
a
=25
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
0.2
0.1
1
10
100 150
Single phase half wave, 60Hz, resistive of inductive load.
COLLECTOR CURRENT I
C
(mA)
For capacitive load, derate current by 20%
150
β=10
β=10
0.01
0.1
1
10
100 150
COLLECTOR CURRENT
I
C
(mA)
Marking Code
(mA)
100
RATINGS
I
C
——
V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
100
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
10
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
T =25
℃
12
20
14
20
13
30
(pF)
14
40
10
15
50
35
50
16
60
42
C
ib
60
1.0
C
ob
30
40
120
18
80
56
80
T
a
=25
100
℃
f=1MHz
=0/I
I
10
C
=0
E
115
150
105
150
120
200
140
200
V
T
a
=100
℃
21
28
40
70
100
V
COLLCETOR CURRENT
CAPACITANCE
Maximum Average Forward Rectified Current
a
Peak Forward Surge Current 8.3 ms single half sine-wave
C
30
I
C
V
A
superimposed on rated load (JEDEC method)
1
I
FSM
R
ΘJA
1
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
0.1
Operating Temperature Range
0.2
COMMON EMITTER
C
J
V
CE
=6V
0.6
0.8
-55 to +125
0.1
1.0
0.1
-55 to +150
10
20
℃
Storage Temperature Range
BASE-EMMITER VOLTAGE
1000
0.4
T
J
REVERSE VOLTAGE
V
BE
(V)
TSTG
-
65
to +175
(V)
V
1
f
T
CHARACTERISTICS
—— I
C
P
C
—— T
a
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
250
Maximum Forward Voltage at 1.0A DC
(MHz)
V
F
I
R
0.50
0.70
0.85
0.9
0.92
V
COLLECTOR POWER DISSIPATION
P
C
(mW)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
TRANSITION FREQUENCY
@T A=125℃
200
0.5
10
m
NOTES:
f
T
150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
100
2- Thermal Resistance From Junction to Ambient
100
50
V
CE
=12V
T
a
=25
℃
10
1
10
50
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-06
WILLAS ELECTRONIC CORP
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
