WILLAS
SOT-323 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch
(NPN)
TRANSISTOR
process design, excellent power dissipation offers
FM120-M
THRU
2SC4081xT1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
•
Low
FEATURES
profile surface mounted application in order to
optimize board space.
Excellent
loss, high efficiency.
•
Low power
h
FE
linearity
High current capability, low forward voltage drop.
•
Pb-Free package is available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Ultra high-speed switching.
•
Halogen free product for packing code suffix “H”
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Symbol
Parameter
Value
Unit
Halogen free product for packing code suffix "H"
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. EMITTER
3. COLLECTOR
0.071(1.8)
0.056(1.4)
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Mechanical data
60
V
0.040(1.0)
0.024(0.6)
50
V
Collector-Emitter Voltage
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Emitter-Base Voltage
7
V
,
•
Terminals :Plated terminals, solderable per
150
MIL-STD-750
mA
Collector Current -Continuous
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Junction Temperature
•
Mounting Position : Any
Storage Temperature
•
Weight : Approximated 0.011 gram
Collector Power Dissipation
Method 2026
200
150
-55-150
mW
℃
℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
AND ELECTRICAL
otherwise specified)
MAXIMUM RATINGS
(T
a
=25℃ unless
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Test conditions
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
For capacitive load, derate current by 20%
12
20
14
13
30
21
30
14
40
28
40
15
50
35
50
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
RATINGS
Marking Code
I =50μA,I
E
=0
V
(BR)CBO
FM120-M
H FM130-MH
FM140-MH FM150-MH
60
FM160-MH
SYMBOL
C
V
(BR)CEO
V
DC
V
RRM
FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Collector-emitter breakdown voltage
Maximum Recurrent Peak Reverse Voltage
I
C
=1mA,I
B
=0
20
50
7
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
V
V
μA
115
150
105
150
120
200
140
200
V
Emitter-base breakdown voltage
Maximum DC Blocking Voltage
Maximum
cut-off current
Collector
Average Forward Rectified Current
Maximum RMS Voltage
V
RMS
V
(BR)EBO
I
E
=50μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=6V,I
C
=1mA
V
V
I
CBO
O
I
I
FSM
I
EBO
R
ΘJA
h
FE(1)
C
J
T
J
V
CE(sat)
TSTG
0.1
0.1
A
Emitter cut-off current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
μA
A
Typical Thermal Resistance (Note 2)
DC current gain
Typical Junction Capacitance (Note 1)
Storage Temperature Range
120
Operating Temperature Range
Collector-emitter saturation voltage
-55 to +125
I
C
=50mA,I
B
=5mA
40
120
180
560
℃
-
65
to +175
-55 to +150
V
0.4
Transition frequency
CHARACTERISTICS
f
T
V
C
ob
F
V
CE
=12V,I
C
=2mA,f=30MHz
0.50
V
CB
12V,I
E
=0,f=1MHz
0.70
0.5
10
MHz
0.85
3.5
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Maximum
output capacitance
Collector
Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
pF
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
R
m
CLASSIFICATION OF h
FE(1)
Q
Rank
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
120-270
Range
BQ
Marking
NOTES:
R
180-390
BR
S
270-560
BS
2012-06
WILLAS ELECTRONIC CORP
2012-
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
