FM120-M
2SC2412KxLT1
THRU
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design,
propagation characteristics
Fig.1 Grounded emitter
excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
50
V
CE
= 6 V
optimize board space.
•
Low power loss, high efficiency.
20
•
High current capability, low forward voltage drop.
10
•
High surge capability.
50
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
2
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
1
MIL-STD-19500 /228
0.5
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T
A
= 100°C
25°C
– 55°C
0.2
Mechanical data
0
0
0.4
0.8
1.2
1.6
0.040(1.0)
0.024(0.6)
2.0
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
Fig.2 Grounded emitter output characteristics( )
SOD-123H
100
0.50mA
T
A
= 25°C
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
80
60
0.071(1.8)
0.056(1.4)
40
20
0.1
•
Epoxy : UL94-V0 rated flame retardant
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
plastic, SOD-123H
•
Case : Molded
BASE TO EMITTER VOLTAGE(V)
V
BE
,
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.031(0.8) Typ.
0.031(0.8) Typ.
Fig.3 Grounded emitter output characteristics( )
Method 2026
I
C
, COLLECTOR CURRENT (mA)
•
Polarity : Indicated by cathode band
10
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
8
Fig.4 DC current gain vs. collector current ( )
Dimensions in inches and (millimeters)
500
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
100
6
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
4
h
FE
, DC CURRENT GAIN
200
50
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
Marking Code
2
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
4
Maximum DC
0
Blocking Voltage
0
8
12
V
RRM
V
RMS
16
V
DC
12
20
14
20
20
13
30
21
20
14
40
28
40
15
50
35
0.5
16
60
42
2
18
80
56
10
10
100
70
50
115
150
105
200
120
200
140
200
Vo
Vo
30
10
0.2
50
1
60
5
30
80
20
100
100
150
Vo
Maximum Average Forward Rectified Current
I
O
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
1.0
I
C
, COLLECTOR CURRENT (mA)
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
R
ΘJA
C
J
T
J
TSTG
A
Typical Thermal Resistance (Note 2)
Operating
500
Temperature Range
Storage Temperature Range
Fig.5 DC current gain vs. collector current ( )
-55 to
V
CE(sat)
, COLLECTOR SATURATION VOLTAGE(V)
Typical Junction Capacitance (Note 1)
Fig.6 Collector-emitter saturation voltage vs.
40
collector current
120
℃
P
0.5
+125
-
65
to +175
-55 to +150
℃
℃
h
FE
, DC CURRENT GAIN
200
0.2
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Maximum Forward Voltage at 1.0A DC
Maximum
100
Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
@T A=125℃
0.50
0.1
0.70
0.5
10
0.85
0.9
0.92
V
I
R
mA
0.05
NOTES:
50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.02
2- Thermal Resistance From Junction to Ambient
20
0.01
0.2
0.5
1
2
5
10
20
50
100
200
10
0.2
0.5
1
2
5
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
