General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY
NPN Silicon
•
We declare that the material of product
Features
Pb-Free
process design, excellent power dissipation offers
•
Batch
package is available
RoHS product for packing code suffix ”G”
resistance.
better reverse leakage current and thermal
•
Low profile surface
for packing code suffix “H”
Halogen free product
mounted application in order to
WILLAS
FM120-M
2SC2412KxLT1
THRU
FM1200-M
Pb Free Product
outline
SOD-123H
2SC2412KXLT1
0.146(3.7)
0.130(3.3)
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Package
compliance with RoHS requirements.
optimize board space.
•
Low power loss, high efficiency.
ORDERING INFORMATION
low forward voltage drop.
•
High current capability,
•
High surge capability.
Marking
Shipping
Guardring for overvoltage protection.
•
Device
•
Ultra high-speed switching.
3000 Tape & Reel
BQ
2SC2412KQLT1
•
Silicon epitaxial planar chip, metal silicon junction.
BR
3000 Tape & Reel
2SC2412KRLT1
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
2SC2412KSLT1
for packing
G1F
suffix "G"
3000 Tape & Reel
code
•
RoHS product
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
Mechanical
MAXIMUM RATINGS
data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
Rating
Symbol
Value
Unit
•
Case : Molded plastic, SOD-123H
,
V
Collector–Emitter Voltage
V
CEO
•
Terminals :Plated terminals, solderable
50
MIL-STD-750
per
Collector–Base Voltage
2026
Method
V
CBO
60
7.0
150
0.2
V
V
mAdc
W
3
COLLECTOR
0.031(0.8) Typ.
•
Polarity Indicated by cathode band
Emitter–Base
:
Voltage
V
EBO
•
Mounting Position : Any
Collector Current — Continuous
I
C
•
Weight : Approximated 0.011 gram
Collector power dissipation
P
C
Junction temperature
MAXIMUM
Dimensions in inches and (millimeters)
1
BASE
2
EMITTER
150
°C
T
j
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
-55 ~+150
°C
Storage temperature
T
stg
Single phase half wave, 60Hz, resistive of inductive load.
DEVICE MARKING
For capacitive load, derate current by 20%
2SC2412KQLT1=BQ
2SC2412KRLT1 =BR
2SC2412KSLT1 =G1F
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
RATINGS
Marking Code
12
13
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
20
30
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
Characteristic
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
Maximum DC Blocking Voltage
Collector–Emitter Breakdown Voltage
Maximum Average Forward Rectified Current
(I
C
= 1 mA)
Symbol
14
21
V
20
(BR)CEO
30
V
V
(BR)EBO
Min
14
40
28
50
40
7
60
15
50
Typ
35
—
50
16
60
Max
42
—
60
1.0
—
30
—
40
0.1
120
18
80
Unit
56
V
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
V
Emitter–Base Breakdown Voltage
(I
E
= 50
µA)
Peak Forward Surge Current 8.3 ms single half sine-wave
Collector–Base Breakdown Voltage
superimposed on rated load (JEDEC method)
A
—
—
—
—
V
V
µA
A
(I
Thermal Resistance (Note 2)
Typical
C
= 50
µA)
Collector
Capacitance (Note 1)
Typical Junction
Cutoff Current
(V
CB
= 60 V)
Operating Temperature Range
Emitter cutoff current
Storage Temperature Range
(V
EB
= 7 V)
Collector-emitter saturation voltage
CHARACTERISTICS
(I
C
/
B
= 50
Voltage at 1.0A DC
Maximum
I
Forward
mA / 5m A)
DC
Average Reverse Current at @T A=25℃
Maximum
current transfer ratio
@T A=125℃
Rated
(V
CE
Blocking
I
Voltage
DC
= 6 V,
C
= 1mA)
Transition frequency
NOTES:
CE
= 12 V, I
E
= – 2mA, f =30MHz )
(V
2- Thermal Resistance From Junction to Ambient
(V
CB
= 12 V, I
E
= 0A, f =1MHz )
(BR)CBO
—
I
CBO
-55 to +125
I
EBO
—
-55 to +150
℃
-
65
0.1
to +175
µA
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
SYMBOL
FM120-MH
FM130-MH
—
—
0.4
V
V
CE(sat)
V
F
I
R
h
FE
f
T
C
ob
0.50
120
––
180
2.0
0.70
560
0.5
10
0.85
0.9
0.92
V
––
MHz
pF
m
—
—
––
3.5
1- Measured at
capacitance
Output
1 MHZ and applied reverse voltage of 4.0 VDC.
h
FE
values are classified as follows:
hFE
*
Q
120~270
R
180~390
S
270~560
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
