1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
Medium Power Transistor
Features
WILLAS
FM120-M
2SC2411KxLT1
THRU
FM1200-M
Pb Free Product
Package outline
= 25°C)
SOD-123H
1000
500
TRANSITION FREQUENCY : f (MHz)
200
100
50
better reverse leakage current and thermal
characteristic curves(T
A
Electrical
resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
500
•
High current capability, low forward voltage
3V
V
CE
=
drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
O
00 C
T
Silicon
•
a = 1 5
O
epitaxial planar chip, metal silicon junction.
200
7 C
•
Lead-free parts meet environmental standards of
O
50 C
MIL-STD-19500 /228
O
2 C
•
RoHS
5
product for packing code suffix "G"
O
0 C
100
Halogen free product for packing code suffix "H"
O
5
C
2
Mechanical data
0.146(3.7)
0.130(3.3)
Ta
=
25
C
V
CE
=
5V
0.071(1.8)
0.056(1.4)
0.012(0.3) Typ.
O
DC CURRENT GAIN : h
FE
20
10
0.1
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.2
0.5
1
2
10
Method
5
2026
20
50 100 200
500 1000
O
50 C
T
0.040(1.0)
0.024(0.6)
50
0.031(0.8) Typ.
0.031(0.8) Typ.
0.5
1
2
5
10
20
50
•
Polarity :
COLLECTOR
by cathode
I
C
(mA)
Indicated
CURRENT :
band
Fig.5 DC current gain
•
Mounting Position : Any
vs. collector current
•
Weight : Approximated 0.011 gram
EMITTER CURRENT : (mA)
Dimensions in inches and
I
(millimeters)
E
Fig.6 Gain bandwidth product vs. emitter current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
: Cib(pF)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
50
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
Cib
20
13
30
21
30
14
Ta
= 25
C
15
f
=
1MHz
40
50
I
E
=0A
28
I
C
=
0A
35
O
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
V
EMITTER INPUT CAPACITANCE
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
10
20
40
50
V
A
Cob
A
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Typical Junction Capacitance (Note 1)
5
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
20
50
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
2
0.5
1
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
COLLECTOR TO BASE VOLTAGE : V
CE
(V)
V
F
0.50
EMITTER TO BASE VOLTAGE: V
EB
(V)
2
5
10
0.70
0.5
10
0.85
0.9
0.92
V
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Fig.7
@T A=125℃
I
R
Collector output capacitance vs.
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
WILLAS [ WILLAS ELECTRONIC CORP ]
