FM120-M
2SC2411KxLT1
THRU
Medium Power Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Product
Features
Package outline
SOD-123H
NPN silicon
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
FEATURE
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
Epitaxial planar type
•
High surge capability.
Complementary
overvoltage
•
Guardring for
to 2SA1036K
protection.
Ultra high-speed switching.
•
We declare that the material of product compliance with RoHS requirements.
Silicon
package is available
•
Pb-Free
epitaxial planar chip, metal silicon junction.
Lead-free parts
•
RoHS product for
meet environmental standards of
packing code suffix ”G”
MIL-STD-19500 /228
RoHS product for packing
packing code
•
Halogen free product for
code suffix "G"
suffix “H”
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
SOT– 23
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
DEVICE MARKING AND ORDERING INFORMATION
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
2SC2411KRLT1
CR
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Marking
Method 2026
2SC2411KQLT1
CQ
Polarity : Indicated by cathode band
Device
Shipping
3000/Tape&Reel
3000/Tape&Reel
0.031(0.8) Typ.
3
COLLECTOR
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
1
BASE
Dimensions in inches and (millimeters)
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS
(T
A
= 25
°
C)
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
Limits
Unit
For capacitive load, derate current by 20%
Collector-base voltage
V
CBO
40
V
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
RATINGS
Collector-emitter voltage
V
CEO
32
V
Marking Code
Emitter-base voltage
V
EBO
V
14
12
5
13
15
16
18
10
115
120
20
0.5
30
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
V
RRM
Collector current
I
C
A*
40
Collector power
Maximum RMS Voltage
dissipation
Junction temperature
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Storage temperature
P
C
V
RMS
V
T
j
DC
T
stg
I
O
14
0.2
21
20
150
30
-55~+150
W
28
°C
40
°C
35
50
42
60
1.0
30
56
80
70
100
105
150
140
200
Vo
Vo
Am
I
FSM
ELECTRICAL CHARACTERISTICS(T
A
=25
°C
)
superimposed on rated load (JEDEC method)
Peak Forward Surge Current 8.3 ms single half sine-wave
*P
C
must not be exceeded.
Am
Parameter
Typical Thermal Resistance (Note 2)
Typical
Collector-base breakdown
1)
Junction Capacitance (Note
voltage
Operating Temperature Range
Collector-emitter breakdown voltage
Storage Temperature
breakdown voltgae
Emitter-base
Range
Symbol
ΘJA
Min.
R
C
BV
CBO
J
T
BV
CEO
J
Typ
Max.
Unit
V
V
40
32
-
-55
-
+125
-
to
-
Conditions
40
I
120
=100µA
C
-55 to +150
℃/
P
TSTG
℃
BV
EBO
5
-
-
V
E
Collector cutoff current
I
CBO
-
-
1
µA
V
CB
=20V
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Emitter cutoff current
I
EBO
-
-
1
µA
V
EB
=4V
Vo
0.9
Maximum Forward Voltage at
ratio
DC
0.92
0.85
DC current transfer
1.0A
h
FE
V
F
2
-
0.50
390
-
0.70
V
CE
=3V
,I
C
=100mA
0.5
Maximum Average Reverse Current at @T A=25℃
V
Collcetor-emitter saturation voltage
-
-
0.4
V
I
C
/I
B
=500mA/50mA
CE(sat)
I
R
mA
10
@T A=125℃
f
Rated DC Blocking
frequency
Transition
Voltage
-
250
-
MHz
V
CE
=5V,I
E
=-20mA,f=100MHz
T
NOTES:
I
C
=1mA
-
65
to +175
I =100µA
℃
Output capacitance
C
ob
-
6.0
-
pF
V
CB
=10V,I
E
=0A,f=1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
h
FE
values are classified as follows:
Item
h
FE
Q
R
120~270 180~390
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
