SOT-89 Plastic-Encapsulate Transistors
Features
-600
-500
WILLAS
Static Characteristic
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Typical Characteristics
1000
FE
FM120-M
2SB1308
THRU
FM1200-M
C
Pb Free Product
COMMON EMITTER
V
CE
=-2V
——
I
Package
h
outline
•
Batch process
(mA)
better reverse
COMMON
-1.5mA
design, excellent power dissipation offers
EMITTER
-1.35mA
T
a
=25
℃
leakage current and thermal resistance.
h
FE
T
a
=100
℃
-1.2mA
•
Low profile surface mounted application in order to
-400
SOD-123H
-1.05mA
optimize board space.
•
Low power loss, high efficiency.
-0.9mA
High
•
-300
current capability, low forward voltage drop.
-0.75mA
•
High surge capability.
-0.6mA
Guardring for overvoltage protection.
•
-200
-0.45mA
•
Ultra high-speed switching.
-0.3mA
Silicon epitaxial planar chip, metal silicon junction.
•
-100
•
Lead-free parts meet environmental standards of
I
B
=-0.15mA
MIL-STD-19500 /228
-0
•
RoHS product for packing code suffix "G"
-4
-0
-1
-2
-3
-5
COLLECTOR-EMITTER VOLTAGE
suffix
Halogen free product for packing code
V
CE
(V)
"H"
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=25
℃
300
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
100
-1
-10
-100
-1000
-3000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
-1000
-100
Mechanical data
V
CEsat
——
I
C
-1200
V
BEsat
——
I
C
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-1000
0.031(0.8) Typ.
Method 2026
a
•
Polarity : Indicated by cathode band
T =100
℃
•
Mounting Position : Any
T =25
℃
•
Weight : Approximated 0.011 gram
-10
a
-800
Dimensions in inches and (millimeters)
T =25
℃
a
-600
T
a
=100
℃
-400
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
Single phase half wave, 60Hz, resistive of inductive load.
-1
-3000
-1
-10
-100
-1000
For capacitive load, derate current by 20%
I
C
(mA)
COLLECTOR CURRENT
Marking Code
-3000
Maximum RMS Voltage
(mA)
-1000
β=10
-200
-1
-10
-100
-1000
-3000
COLLECTOR CURRENT
I
C
(mA)
RATINGS
I
C
——
V
BE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
f
T
—— I
C
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
I
C
COLLECTOR CURRENT
T =1
00
℃
a
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
COMMON EMITTER
V
CE
=-2V
TSTG
T =2
5
℃
a
12
20
14
13
200
30
21
30
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
115
150
105
150
120
200
140
(MHz)
f
T
20
100
42
60
1.0
30
80
100
200
-100
TRANSITION FREQUENCY
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
-10
Typical Thermal Resistance (Note 2)
COMMON EMITTER
-55 to +150
V
CE
= -6V
30
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-1
-0
-300
-600
-10
10
-7
-55 to +125
-1200
40
120
T
-
65
to +175
a
=25
℃
-100
-900
CHARACTERISTICS
ob
ib
BASE-EMMITER VOLTAGE V
BE
(mV)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
COLLECTOR CURRENT
I
C
(mA)
Maximum Forward Voltage at 1.0A DC
——
C /C
Rated DC Blocking Voltage
(pF)
500
Maximum Average Reverse Current at @T A=25℃
V
CB
/V
EB
V
F
I
R
f=1MHz
I
E
=0/I
C
=0
COLLECTOR POWER DISSIPATION
P
C
(mW)
T
a
=25
℃
600
0.50
0.70
—— T
a
P
C
0.5
10
0.85
0.9
0.92
@T A=125℃
C
ib
500
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CAPACITANCE
400
2- Thermal Resistance From Junction to Ambient
C
C
ob
100
300
200
100
2012-06
10
-0.1
0
-1
-10
-20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC CORP
T (
℃
)
a
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
