SOT-89 Plastic-Encapsulate Transistors
Features
TRANSISTOR (PNP)
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
FM120-M
2SB1308
THRU
FM1200-M
Pb Free Product
Package outline
SOT-89
SOD-123H
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Power Transistor
optimize board space.
•
Low power loss, high
Gain
Excellent DC current
efficiency.
•
High current capability, low forward voltage drop.
Low Collector-emitter Saturation Voltage
•
High surge capability.
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
0.071(1.8)
0.056(1.4)
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Symbol
Parameter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CBO
Collector-Base Voltage
Method 2026
Collector-Emitter Voltage
V
CEO
Polarity : Indicated by cathode band
•
Emitter-Base Voltage
V
EBO
Mounting Position : Any
•
Collector Current
I
C
•
Weight : Approximated 0.011 gram
P
C
R
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
0.040(1.0)
0.024(0.6)
Value
-30
-20
-6
-3
500
0.031(0.8) Typ.
Unit
V
0.031(0.8) Typ.
V
Dimensions in inches and (millimeters)
V
A
mW
℃
℃
15
50
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
250
150
-55~+150
13
30
14
40
40
θJA
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
T
j
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Storage Temperature
T
stg
℃/W
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
14
21
28
35
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
DC
I
O
12
20
V
V
Parameter
Symbol
V
(BR)CBO
V
I
FSM
(BR)CEO
20
Test conditions
30
Min
-30
-20
-6
Typ
Max
Unit
V
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Collector-base breakdown voltage
A
I
C
=-50µA,I
E
=0
I
C
=-1mA,I
B
=0
Collector-emitter breakdown voltage
A
Emitter-base breakdown voltage
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Collector cut-off current
Operating Temperature Range
Storage Temperature Range
V
R
ΘJA
(BR)EBO
C
J
I
CBO
TSTG
I
E
=-50µA,I
C
=0
Emitter cut-off current
DC current gain
I
EBO
h
FE
T
J
V
CB
=-20V,I
E
=0
V
EB
=-5V,I
C
=0
-55 to +125
40
120
V
µA
µA
-
65
to +175
-0.5
-0.5
390
0.85
℃
-55 to +150
V
CE
=-2V, I
C
=-0.5A
0.50
82
0.70
0.5
10
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
Collector-emitter saturation voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
I
C
=-1.5A,I
B
=-0.15A
-0.45
V
V
CE(sat)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Collector output capacitance
Transition frequency
V
F
I
R
C
ob
f
T
V
CB
=-20V,I
E
=0, f=1MHz
V
CE
=-6V,I
C
=-50mA,
f=30MHz
60
pF
0.9
0.92
V
@T A=125℃
m
120
MHz
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h
FE
RANK
RANGE
MARKING
P
82–180
BFP
Q
120–270
BFQ
R
180–390
BFR
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
