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2SB1260 参数 Datasheet PDF下载

2SB1260图片预览
型号: 2SB1260
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 89塑封装晶体管 [SOT-89 Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 362 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号2SB1260的Datasheet PDF文件第1页  
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
2SB1260
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Outline Drawing
Mechanical data
.181(4.60)
Epoxy : UL94-V0 rated flame retardant
.173(4.39)
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
im
i
V
RRM
V
RMS
I
O
12
20
14
13
30
21
30
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
na
.102(2.60)
14
15
40
50
.091(2.30)
28
35
40
50
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Polarity : Indicated by cathode band
.061REF
Mounting Position : Any
(1.55)REF
Weight : Approximated 0.011 gram
.154(3.91)
Maximum RMS Voltage
Pr
el
.167(4.25)
ry
 
.063(1.60)
.055(1.40)
Dimensions in inches and (millimeters)
V
Maximum DC Blocking Voltage
 
Maximum Average Forward Rectified Current
.023(0.58)
20
V
DC
.016(0.40)
 
I
FSM
V
V
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.047(1.2)
 
 
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.031(0.8)
R
ΘJA
C
J
T
J
TSTG
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
.060TYP
CHARACTERISTICS
(1.50)TYP
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
.197(0.52)
.013(0.32)
0.50
0.70
0.5
10
.118TYP
Maximum Average Reverse Current at @T A=25℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.017(0.44)
0.85
.014(0.35)
0.9
0.92
 
V
@T A=125℃
(3.0)TYP
m
 
 
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP
Rev.C
2012-
0
WILLAS ELECTRONIC CORP.