SOT-89 Plastic-Encapsulate Transistors
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
2SB1260
THRU
FM1200-M
Pb Free Product
Package outline
SOT-89
SOD-123H
•
Batch process design, excellent power dissipation offers
TRANSISTOR (PNP)
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
FEATURES
optimize board space.
Power
power loss, high efficiency.
•
Low
Transistor
•
High current capability, low
High Voltage and Current
forward voltage drop.
•
High surge capability.
Low Collector-emitter saturation voltage
•
Guardring for overvoltage protection.
Pb-Free package is available
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal
suffix ”G”
RoHS product for packing code
silicon junction.
•
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix “H”
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
Mechanical data
MAXIMUM RATINGS
rated flame retardant
otherwise noted)
•
Epoxy : UL94-V0
(T
a
=25℃ unless
•
Case : Molded plastic, SOD-123H
Symbol
Parameter
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CBO
Collector-Base Voltage
Method 2026
V
CEO
•
Polarity
Collector-Emitter Voltage
: Indicated by cathode band
Emitter-Base Voltage
V
EBO
•
Mounting Position : Any
0.040(1.0)
0.024(0.6)
•
: Approximated 0.011 gram
I
C
Weight
Collector Current
P
C
R
Collector Power Dissipation
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Thermal Resistance From Junction To Ambient
250
im
12
20
unless
14
θJA
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
Single
T
j
phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Storage Temperature
T
stg
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
ina
-1
A
500
mW
℃
℃/W
℃
16
60
42
18
80
10
100
115
150
120
200
140
200
Pr
el
Maximum Recurrent
CHARACTERISTICS
ELECTRICAL
Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
(T
a
=25℃
V
RMS
13
14
15
30
40
50
otherwise specified)
21
28
35
50
ry
-80
V
-80
-5
V
150
-55~+150
Min
60
-80
1.0
-80
-5
30
Value
0.031(0.8) Typ.
Unit
0.031(0.8) Typ.
V
Dimensions in inches and (millimeters)
V
Parameter
Maximum DC Blocking Voltage
Symbol
V
DC
V
(BR)CBO
I
O
V
(BR)CEO
conditions
20
Test
30
40
I
C
=-50µA,I
E
=0
I
E
=-50µA,I
C
=0
I
C
=-1mA,I
B
=0
Typ
80
56
Max
100
70
Unit
150
V
V
V
105
V
V
Collector-base breakdown voltage
Maximum Average Forward Rectified Current
Emitter-base breakdown
method)
superimposed on rated load (JEDEC
voltage
Typical Thermal Resistance (Note 2)
Collector cut-off current
Operating Temperature Range
Typical Junction Capacitance (Note 1)
A
Peak Forward Surge Current 8.3 ms single half sine-wave
Collector-emitter breakdown voltage
V
(BR)EBO
R
I
CBO
ΘJA
C
J
T
J
I
FSM
A
V
CB
=-60V,I
E
=0
V
EB
=-4V,I
+125
=0
-55 to
C
V
CE
=-3V, I
C
=-0.1A
I
C
=-500mA,I
B
=-50mA
V
CB
=-10V,I
E
=0, f=1MHz
0.50
0.70
Emitter cut-off current
I
EBO
40
120
-1
µA
µA
℃
DC current gain
Storage Temperature Range
82
65
to +175
-
25
-55 to +150
-1
h
FE
TSTG
V
CE(sat)
V
F
@T A=125℃
390
-0.4
0.85
Collector-emitter saturation voltage
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
V
pF
0.9
0.92
Collector output capacitance
Transition frequency
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
C
ob
V
Maximum Average Reverse Current at @T A=25℃
I
R
T
f
V
CE
=-5V,I
C
=-50mA,
f=30MHz
0.5
10
100
MHz
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h
FE
RANK
RANGE
MARKING
P
82–180
Q
120–270
ZL
R
180–390
2012-06
WILLAS ELECTRONIC CORP
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
