欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SB1197KXLT1 参数 Datasheet PDF下载

2SB1197KXLT1图片预览
型号: 2SB1197KXLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 低频晶体管 [Low Frequency Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 316 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号2SB1197KXLT1的Datasheet PDF文件第1页浏览型号2SB1197KXLT1的Datasheet PDF文件第2页  
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
Low Frequency Transistor
Features
SOT-23
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
.122(3.10)
Guardring for overvoltage protection.
.106(2.70)
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.063(1.60)
.047(1.20)
WILLAS
FM120-M
2SB1197KxLT1
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
.006(0.15)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
.070(1.78)
Mounting Position : Any
Weight : Approximated 0.011 gram
.080(2.04)
.008(0.20)
Dimensions in inches and (millimeters)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
RRM
.055(1.40)
.035(0.89)
12
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vo
14
V
RMS
.020(0.50)
20
V
DC
.012(0.30)
I
O
 
I
FSM
Dimensions
R
ΘJA
C
J
T
J
TSTG
Vo
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
in inches and (millimeters)
 
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
-55 to +125
 
-55 to +150
P
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
0.037
0.95
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
FM120-MH
FM130-MH
0.95
0.037
V
F
I
R
0.50
0.70
0.85
0.9
0.92
 
Vo
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.079
2.0
 
 
0.035
0.9
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.