WILLAS
Low Frequency Transistor
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
FEATURE
surge capability.
•
High
High current capacity in compact package.
•
Guardring
0.8A.
I
C
=
for overvoltage protection.
•
Ultra high-speed switching.
Epitaxial planar type.
•
Silicon epitaxial planar chip, metal silicon junction.
NPN complement: 2SD1781K
•
Lead-free parts meet environmental standards of
We declare
/228
MIL-STD-19500
that the material of product compliance with RoHS requirements.
Pb-Free package is
suffix "G"
•
RoHS product for packing code
available
Halogen free
product for packing code suffix ”G”
RoHS
product for packing code suffix "H"
FM120-M
2SB1197KxLT1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
Package outline
SOD-123H
PNP Silicon
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOT– 23
Mechanical data
for packing code suffix “H”
Halogen free product
•
Epoxy : UL94-V0 rated flame retardant
•
Case :
MARKING AND ORDERING INFORMATION
DEVICE
Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Device
Method 2026
Marking
Shipping
3000/Tape&Reel
3000/Tape&Reel
3
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
COLLECTOR
0.031(0.8) Typ.
1
BASE
•
Polarity : Indicated by cathode band
2SB1197KQLT1
AHQ
•
Mounting Position : Any
2SB1197KRLT1
AHR
•
Weight : Approximated 0.011 gram
MAXIMUM RATINGS(Ta=25
C)
Dimensions in inches and (millimeters)
2
EMITTER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Limits
Parameter
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
CBO
−40
Collector-base voltage
Collector-emitter voltage
RATINGS
Marking Code
Emitter-base voltage
Maximum Recurrent Peak Reverse Voltage
Collector current
Maximum RMS Voltage
Collector power dissipation
Maximum DC Blocking Voltage
Junction temperature
Maximum Average Forward Rectified Current
Storage temperature
superimposed on rated load (JEDEC method)
Unit
V
V
CEO
SYMBOL
FM120-M
H FM130-MH
V
−32
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
V
EBO
I
C
P
C
Tj
Tstg
V
RRM
V
RMS
V
DC
I
O
C)
I
FSM
−5
12
20
−0.8
13
30
21
30
14
0.2
20
150
V
14
A
40
W
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
28
V
°C
°C
40
V
−55
to 150
A
Peak Forward Surge Current 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS(Ta=25
A
Parameter
Typical Thermal Resistance (Note 2)
Collector-base breakdown voltage
Typical Junction Capacitance (Note 1)
Collector-emitter breakdown voltage
Operating Temperature Range
Emitter-base breakdown voltage
Storage Temperature Range
Symbol Min.
R
ΘJA
BV
CBO
−40
C
J
BV
CEO
J
−32
T
BV
EBO
TSTG
−5
Typ.
−
−
Max.
Unit
V
−
−
−
−
-55 to +125
V
V
Conditions
40
I
C
= −50µ
A
120
I
C
= −1mA
I
E
= −50µ
A
-
65
to +175
-55 to +150
℃
P
NOTES:
−0.5
−
V
CB
= −20V
µ
A
I
CBO
−
Collector cutoff current
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
−0.5
−
V
EB
= −4V
−
I
EBO
µ
A
Emitter cutoff current
V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
0.85
−0.5
V
CE(sat)
I
C
/I
B
= −0.5A/ −50mA
−
−
V
Collector-emitter saturation voltage
0.5
Maximum Average Reverse Current at @T A=25℃
m
390
h
FE
I
R
120
−
−
V
CE
= −3V,
I
C
= −100mA
DC current transfer ratio
10
@T A=125℃
Rated DC Blocking Voltage
−
−
V
CE
= −5V,
I
E
=50mA,
f=100MHz
200
f
T
MHz
Transition frequency
Output capacitance
Cob
−
12
30
pF
V
CB
= −10V,
I
E
=0A,
f=1MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
h
FE
values are classified as follows :
Item(*)
h
FE
Q
120~270
R
180~390
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.