WILLAS
310 mAmps, 60 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Small Signal MOSFET
Features
Package outline
CHARACTERISTICS
1.0
V
DS
= 10 V
0.8
0.6
0.4
0.2
0.031(0.8) Typ.
FM120-M
THRU
2N7002ELT1
FM1200-M
Pb Free Product
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
TYPICAL ELECTRICAL
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
2.0
•
High current capability, low forward voltage drop.
1.8
capability.
•
High surge
T
A
= 25°C
•
Guardring for overvoltage protection.
1.6
V
GS
= 10 V
•
Ultra high-speed switching.
1.4
9V
•
Silicon epitaxial planar chip, metal silicon junction.
1.2
•
Lead-free parts meet environmental standards of
8V
MIL-STD-19500 /228
1.0
•
RoHS product for packing code suffix "G"
7V
0.8
Halogen free product for packing code suffix "H"
6V
0.6
Mechanical data
5V
0.4
•
Epoxy : UL94-V0 rated flame retardant
4V
0.2
•
Case : Molded plastic, SOD-123H
3V
,
0
•
Terminals :Plated terminals, solderable per
7.0 8.0 9.0 10
MIL-STD-750
0
1.0 2.0 3.0 4.0 5.0
6.0
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-o55C
°
0.071(1.8)
0.056(1.4)
25°C
125°C
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
1.0
•
Figure 1. Ohmic Region
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
r
DS(on) ,
STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.4
Method 2026
SOURCE VOLTAGE (VOLTS)
V
DS,
DRAIN
Polarity : Indicated by cathode band
2.0 3.0 4.0
5.0
6.0 7.0 8.0
V
GS,
GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 2. Transfer Characteristics
Dimensions in inches and (millimeters)
2.2
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
2.0
wave,
10 V
resistive of inductive load.
half
V
GS
=
60Hz,
I = 200 mA
For capacitive load,
D
derate current by 20%
1.8
Marking Code
V
GS(th),
THRESHOLD VOLTAGE (NORMALIZED)
1.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.05
1.1
1.10
14
0.95
40
0.9
28
0.85
40
0.8
15
50
35
50
16
60
60
18
80
56
80
10
100
70
100
V
DS
= V
GS
I
D
= 1.0 mA
1.6
1.4
1.2
1.0
0.8
0.6
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1.0
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
12
20
14
13
30
21
115
150
105
150
120
200
140
Volts
Volts
Volts
Amps
42
20
30
200
I
FSM
0.4
superimposed on
-o60
load (JEDEC method)
+o20
rated
-o20
+o60
Typical Thermal Resistance (Note 2)
T, TEMPERATURE (°C)
ΘJA
R
Peak Forward Surge Current 8.3 ms single half sine-wave
0.75
-o60
+o100
0.7
+o140
Typical Junction Capacitance (Note 1)
Storage Temperature Range
Figure 3. Temperature versus Static
Operating Temperature Range
T
J
Drain–Source On–Resistance
TSTG
C
J
-55 to +125
1.0
30
-o20
+o20
T,
40
TEMPERATURE (°C)
120
+o60
+o100
Amps
℃/W
PF
℃
℃
+o140
Figure 4. Temperature versus Gate
-55 to +150
Threshold Voltage
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
